Electrical conduction mechanisms in the transfer characteristics of pentacene thin film transistors

Lin, Yow−Jon; Lin, Yu‐Cheng

doi:10.1063/1.4890505

Cited by 9 publications

(1 citation statement)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Examined with the goal of improving charge transport, deposition conditions generally focus on optimizing intermolecular distances while minimizing the negative effects of grain boundaries, interface energetics, and device architecture 22 , 26 – 28 . Electrically, improved charge transport is characterized by high mobility ( µ ), a voltage threshold ( V T ) near 0 V, low hysteresis, a large on/off current ratio ( On/Off ), and low defect density ( N ), all of which can be obtained from the transfer characteristics of an OTFT 7 , 29 , 30 . Post-deposition annealing can be accomplished with a range of techniques, most commonly heat or solvent vapor, but the goal of improved charge transport, and the mechanisms by which it’s achieved, remain the same 31 , 32 .…”

Section: Introductionmentioning

confidence: 99%

Surface engineering of zinc phthalocyanine organic thin-film transistors results in part-per-billion sensitivity towards cannabinoid vapor

et al. 2022

View full text Add to dashboard Cite

Phthalocyanine-based organic thin-film transistors (OTFTs) have been demonstrated as sensors for a range of analytes, including cannabinoids, in both liquid and gas phases. Detection of the primary cannabinoids, Δ9-tetrahydrocannabinol (THC) and cannabidiol (CBD), is necessary for quality control and regulation, however, current techniques are often not readily available for consumers, industry, and law-enforcement. The OTFT characteristics, X-ray diffraction (XRD) spectra, and grazing incident wide angle x-ray scattering (GIWAXS) spectra of two copper and three zinc phthalocyanines, with varying degrees of peripheral fluorination, were screened to determine sensitivity to THC vapor. Unsubstituted ZnPc was found to be the most sensitive material and, by tuning thin-film morphology, crystal polymorphs, and thickness through altered physical vapor deposition conditions, we increased the sensitivity to THC by 100x. Here we demonstrate that deposition conditions, and the resulting physical film characteristics, play a significant role in device sensitization.

show abstract

Section: Introductionmentioning

confidence: 99%

Surface engineering of zinc phthalocyanine organic thin-film transistors results in part-per-billion sensitivity towards cannabinoid vapor

et al. 2022

View full text Add to dashboard Cite

show abstract

High‐Performance Flexible Organic Nano‐Floating Gate Memory Devices Functionalized with Cobalt Ferrite Nanoparticles

Jung

Kim

et al. 2015

Small

View full text Add to dashboard Cite

Nano-floating gate memory (NFGM) devices are transistor-type memory devices that use nanostructured materials as charge trap sites. They have recently attracted a great deal of attention due to their excellent performance, capability for multilevel programming, and suitability as platforms for integrated circuits. Herein, novel NFGM devices have been fabricated using semiconducting cobalt ferrite (CoFe2O4) nanoparticles (NPs) as charge trap sites and pentacene as a p-type semiconductor. Monodisperse CoFe2O4 NPs with different diameters have been synthesized by thermal decomposition and embedded in NFGM devices. The particle size effects on the memory performance have been investigated in terms of energy levels and particle-particle interactions. CoFe2O4 NP-based memory devices exhibit a large memory window (≈73.84 V), a high read current on/off ratio (read I(on)/I(off)) of ≈2.98 × 10(3), and excellent data retention. Fast switching behaviors are observed due to the exceptional charge trapping/release capability of CoFe2O4 NPs surrounded by the oleate layer, which acts as an alternative tunneling dielectric layer and simplifies the device fabrication process. Furthermore, the NFGM devices show excellent thermal stability, and flexible memory devices fabricated on plastic substrates exhibit remarkable mechanical and electrical stability. This study demonstrates a viable means of fabricating highly flexible, high-performance organic memory devices.

show abstract

Temperature-dependent electrical properties for graphene Schottky contact on n-type Si with and without sulfide treatment

2014

View full text Add to dashboard Cite

The temperature-dependent current-voltage (I-V) characteristics of graphene/n-type Si Schottky diodes with and without sulfide treatment were measured in the temperature range of 150-420 K. The temperature dependence of forward-bias I-V characteristics can be explained on the basis of the thermionic emission theory by assuming the presence of Gaussian distribution of the barrier heights. The graphene/n-type Si device with sulfide treatment exhibits a good rectifying behavior with the ideality factor of 1.8 and low leakage at 300 K. The enhanced device performance is considered to mainly come from the presence of Si-S bonds that serve to improve the Schottky barrier inhomogeneity. Compared to the fitting data for the temperature-dependent reverse-bias I-V characteristics of graphene/n-type Si devices without sulfide treatment, the fitting data for the temperature-dependent reverse-bias I-V characteristics of graphene/n-type Si devices with sulfide treatment show that a higher barrier height for hopping result in a lower leakage current. This is because of more homogenous barrier height for graphene/n-type Si devices with sulfide treatment.

show abstract

Electrical conduction mechanisms in the transfer characteristics of pentacene thin film transistors

Cited by 9 publications

References 28 publications

Surface engineering of zinc phthalocyanine organic thin-film transistors results in part-per-billion sensitivity towards cannabinoid vapor

Surface engineering of zinc phthalocyanine organic thin-film transistors results in part-per-billion sensitivity towards cannabinoid vapor

High‐Performance Flexible Organic Nano‐Floating Gate Memory Devices Functionalized with Cobalt Ferrite Nanoparticles

Temperature-dependent electrical properties for graphene Schottky contact on n-type Si with and without sulfide treatment

Contact Info

Product

Resources

About