Electrical Conduction in Polycrystalline CVD Diamond: Temperature Dependent Impedance Measurements

Electrical properties and equivalent circuit of trimethylammonium monobromodichloromercurate

“…1) shows only one anomaly for TrHgBrCl 2 . Impedance spectroscopy is able to correlate electrical properties and physical properties using equivalent circuit models on a non-destructive basis: details can be found elsewhere [10,11]. The equivalent elec- trical circuit suggested for the electrochemical cell with tile TrHgBrCl 2 electrode is represented in Fig.…”

An insight of p-type to n-type conductivity conversion in oxygen ion-implanted ultrananocrystalline diamond films by impedance spectroscopy

“…It has also been used to characterize the conduction paths in polycrystalline, nanocrystalline diamond films and diamond MOS structures at various biases. [23][24][25][26][27] Here, IS and temperature dependent current-voltage (I-V) technique were used to understand the conduction mechanism and obtain the inherent insight of conductivity transition in O + -implanted UNCD films. This has significance in the preparation of nanocrystalline diamond based devices.…”

Hydrogen-terminated detonation nanodiamond: Impedance spectroscopy and thermal stability studies

“…17 It has been successfully applied in characterizing the electrical properties of grain interiors as well as the grain boundaries properties of polycrystalline, nanocrystalline diamond, δ-doped diamond and mono-layer nanodiamond. 14, [18][19][20][21] In essence, the IS technique involves the measurement of real and imaginary parts of the complex impedance as a function of frequency.…”

“…(3), when n=3, this equation indicates that there are three conduction mechanisms in the semiconductor material namely: electrode, grain interiors (GI) and grain boundaries (GB). [17][18][19] It was already established in literature that the capacitance associated with grain boundary (C GB ) is 2-3 orders of magnitude higher than the capacitance associated with the grain interior (C GI ). 19,22 The parameters R p and C p were extracted from the fitting equivalent circuit and shown in Table 1.…”

“…The average grain size indicates that the effect of small-size and the large surface area-to-volume ratio may reduce the capacitance C p , comparing with the capacitance calculated in single/poly-crystalline diamond films. [17][18][19][20] The hydrogen-termination treatment enhanced the grain boundary conduction on the surface of the DND particles and grain interior effect from the core was undermined.…”