2012
DOI: 10.4191/kcers.2012.49.5.404
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Electrical Characterization of Ultrathin Film Electrolytes for Micro-SOFCs

Abstract: The reliability of solid oxide fuel cells (SOFCs) particularly depends on the high quality of solid oxide electrolytes. The application of thinner electrolytes and multi electrolyte layers requires a more reliable characterization method. Most of the investigations on thin film solid electrolytes have been made for the parallel transport along the interface, which is not however directly related to the fuel cell performance of those electrolytes. In this work an array of ion-blocking metallic Ti/Au microelectr… Show more

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Cited by 3 publications
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“…Since the conductivity of the Nb-STO substrate is much higher than GDC thin films (σ­(Nb – STO) ≅ 150 Ω –1 cm –1 at room temperature), the contribution of pure ohmic resistance is negligible, and thus, the impedance spectra generally contains two major components consisting of a parallel RQ element (GDC film) at high frequencies and a constant phase element (electrode reaction) at low frequencies. For out-of-plane conductivity measurements, grain boundary contributions are not commonly observed, owing to a parallel conduction path to the grain boundary (no conduction across the grain boundary); thus, the overall impedance spectra can be divided into two contributions: resistance to ionic migration through the grain of the thin film at high frequencies and the interface resistance at the interface between the thin film and electrode at low frequencies. Therefore, the resistance and capacitance of GDC thin film can be estimated by fitting the impedance spectra using the equivalent circuit in the inset of Figure a. The calculated capacitance of GDC thin film is in the range 3–70 nF, which corresponds to the value calculated using the relative permittivity of GDC and the geometric factor for the out-of-plane direction (A/l ≅ 7 m).…”
mentioning
confidence: 99%
“…Since the conductivity of the Nb-STO substrate is much higher than GDC thin films (σ­(Nb – STO) ≅ 150 Ω –1 cm –1 at room temperature), the contribution of pure ohmic resistance is negligible, and thus, the impedance spectra generally contains two major components consisting of a parallel RQ element (GDC film) at high frequencies and a constant phase element (electrode reaction) at low frequencies. For out-of-plane conductivity measurements, grain boundary contributions are not commonly observed, owing to a parallel conduction path to the grain boundary (no conduction across the grain boundary); thus, the overall impedance spectra can be divided into two contributions: resistance to ionic migration through the grain of the thin film at high frequencies and the interface resistance at the interface between the thin film and electrode at low frequencies. Therefore, the resistance and capacitance of GDC thin film can be estimated by fitting the impedance spectra using the equivalent circuit in the inset of Figure a. The calculated capacitance of GDC thin film is in the range 3–70 nF, which corresponds to the value calculated using the relative permittivity of GDC and the geometric factor for the out-of-plane direction (A/l ≅ 7 m).…”
mentioning
confidence: 99%