Electrical characterization of thin Al2O3 films grown by atomic layer deposition on silicon and various metal substrates

Groner, Markus D.; Elam, Jeffrey W.; Fabreguette, F.; George, Steven M.

doi:10.1016/s0040-6090(02)00438-8

Cited by 674 publications

(503 citation statements)

References 34 publications

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“…The QCM signals have been converted to Al 2 O 3 thickness assuming a density of 2.6 g/cm 3 . 18 The Al 2 O 3 growth is extremely linear with a growth rate of 1.0 Å/cycle in excellent agreement with the VASE and SEM results. Moreover, there is no indication of inhibited initial growth as might be expected for Al 2 O 3 ALD on a noble metal surface.…”

Section: Resultssupporting

confidence: 84%

Localized Surface Plasmon Resonance Nanosensor: A High-Resolution Distance-Dependence Study Using Atomic Layer Deposition

Whitney

Elam

Zou³

et al. 2005

J. Phys. Chem. B

292

300

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Atomic layer deposition (ALD) is used to deposit 1-600 monolayers of Al 2 O 3 on Ag nanotriangles fabricated by nanosphere lithography (NSL). Each monolayer of Al 2 O 3 has a thickness of 1.1 Å. It is demonstrated that the localized surface plasmon resonance (LSPR) nanosensor can detect Al 2 O 3 film growth with atomic spatial resolution normal to the nanoparticle surface. This is approximately 10 times greater spatial resolution than that in our previous long-range distance-dependence study using multilayer self-assembled monolayer shells. The use of ALD enables the study of both the long-and short-range distance dependence of the LSPR nanosensor in a single unified experiment. Ag nanoparticles with fixed in-plane widths and decreasing heights yield larger sensing distances. X-ray photoelectron spectroscopy, variable angle spectroscopic ellipsometry, and quartz crystal microbalance measurements are used to study the growth mechanism. It is proposed that the growth of Al 2 O 3 is initiated by the decomposition of trimethylaluminum on Ag. Semiquantitative theoretical calculations were compared with the experimental results and yield excellent agreement.

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Section: Resultssupporting

confidence: 84%

Localized Surface Plasmon Resonance Nanosensor: A High-Resolution Distance-Dependence Study Using Atomic Layer Deposition

Whitney

Elam

Zou³

et al. 2005

J. Phys. Chem. B

292

300

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“…It is less than 100 μA/cm 2 when the gate voltage is 5 V, which is negligible compared to drain current in GFETs and photocurrent in terahertz detectors based on GFETs [11]. The breakdown electric field is about 5 mV/cm, which is similar to reported Al 2 O 3 ALD films on silicon [12]. Thus, we can apply the Al 2 O 3 as gate dielectric in GFETs on flexible substrates.…”

Section: Resultssupporting

confidence: 68%

Characterization of Al2O3 gate dielectric for graphene electronics on flexible substrates

Yang

Bonmann

Vorobiev

et al. 2016

2016 Global Symposium on Millimeter Waves (GSMM) &Amp; ESA Workshop on Millimetre-Wave Technology and Applications

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Abstract-To ensure the high performance of graphene-based field effect transistors (GFETs) on flexible substrates, an uniform and manufacturable dielectric film with good electrical properties is needed. Thus, electrical characterization of the dielectric film on graphene on flexible substrates is very important for the development of flexible electronics based on GFETs. Here, we have fabricated and characterized parallel-plate capacitor test structures consisting of 35 nm thick Al2O3 dielectric film and with graphene as bottom electrode on polyethylene terephthalate (PET). It was found that the leakage current density in the Al2O3 film is less than 100 μA/cm 2 at 5 V, which allows for applying it as a gate dielectric in GFETs on flexible substrates. The extracted dielectric constant of the Al2O3 film is approx. 7.6, which is close to the bulk value and confirms the good quality of the Al2O3 film. Analysis indicates that the measured loss tangent, which is up to 0.2, is governed mainly by the dielectric loss in the Al2O3 and can be associated with defects from the Al 2 O 3 film and the Al2O3/graphene interface. Our results will be used in further development of GFETs on flexible substrates.

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“…In the former case, for ex situ deposited metals, a native oxide of several nanometers (up to ∼5 nm for Al) will pre-exist, and ALD growth occurs easily on top. 21,22 For in situ deposited metals, an IL may form from thermal oxidation or chemisorption of the ALD precursors, and this IL may range in thickness from ∼0.4 nm on in situ ALD-W 23 to ∼2 nm on in situ sputtered Al. 22 On noble metals, such as Pt, Ir, and Ru, nucleation of ALD films can be completely frustrated during the first 30-50 cycles of growth.…”

Section: Fig 1 In Traditional Josephson Junction (Jj) Fabrication Tmentioning

confidence: 99%

Integrating atomic layer deposition and ultra-high vacuum physical vapor deposition for in situ fabrication of tunnel junctions

Elliot

Malek

et al. 2014

Review of Scientific Instruments

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Articles you may be interested inResistive switching characteristics of integrated polycrystalline hafnium oxide based one transistor and one resistor devices fabricated by atomic vapor deposition methods J. Vac. Sci. Technol. B 33, 052204 (2015) Atomic Layer Deposition (ALD) is a promising technique for growing ultrathin, pristine dielectrics on metal substrates, which is essential to many electronic devices. Tunnel junctions are an excellent example which require a leak-free, ultrathin dielectric tunnel barrier of typical thickness around 1 nm between two metal electrodes. A challenge in the development of ultrathin dielectric tunnel barriers using ALD is controlling the nucleation of dielectrics on metals with minimal formation of native oxides at the metal surface for high-quality interfaces between the tunnel barrier and metal electrodes. This poses a critical need for integrating ALD with ultra-high vacuum (UHV) physical vapor deposition. In order to address these challenges, a viscous-flow ALD chamber was designed and interfaced to an UHV magnetron sputtering chamber via a load lock. A sample transportation system was implemented for in situ sample transfer between the ALD, load lock, and sputtering chambers. Using this integrated ALD-UHV sputtering system, superconductor-insulator-superconductor (SIS) Nb-Al/Al 2 O 2 /Nb Josephson tunnel junctions were fabricated with tunnel barriers of thickness varied from sub-nm to ∼1 nm. The suitability of using an Al wetting layer for initiation of the ALD Al 2 O 3 tunnel barrier was investigated with ellipsometry, atomic force microscopy, and electrical transport measurements. With optimized processing conditions, leak-free SIS tunnel junctions were obtained, demonstrating the viability of this integrated ALD-UHV sputtering system for the fabrication of tunnel junctions and devices comprised of metal-dielectric-metal multilayers. © 2014 AIP Publishing LLC. [http://dx

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Electrical characterization of thin Al2O3 films grown by atomic layer deposition on silicon and various metal substrates

Cited by 674 publications

References 34 publications

Localized Surface Plasmon Resonance Nanosensor: A High-Resolution Distance-Dependence Study Using Atomic Layer Deposition

Localized Surface Plasmon Resonance Nanosensor: A High-Resolution Distance-Dependence Study Using Atomic Layer Deposition

Characterization of Al2O3 gate dielectric for graphene electronics on flexible substrates

Integrating atomic layer deposition and ultra-high vacuum physical vapor deposition for in situ fabrication of tunnel junctions

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