Electrical characterization of the threshold fluence for extended defect formation in p-type silicon implanted with MeV Si ions

Fatima, Sehrish; Wong‐Leung, Jennifer; Gerald, John Fitz; Jagadish, Chennupati

doi:10.1063/1.121535

Cited by 22 publications

(15 citation statements)

References 21 publications

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“…For instance, after 1000 min at 370°C, about 65% of the initial VO centers in the FZ samples have been transformed into VOH 2 and the remaining fraction occurs as VO 2 pairs. Thus, the persistence of these vacancies cannot be neglected at temperatures above 400°C when such phenomena as thermal donor formation and generation of extended implantation-induced defects with DLTS signatures [66][67][68] …”

Section: ϫ3mentioning

confidence: 99%

Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implantedn-type silicon

et al. 2001

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Silicon samples of n-type have been implanted at room temperature with 5.6-MeV 28 Si ions to a dose of 2ϫ10 8 cm Ϫ2 and then annealed at temperatures from 100 to 380°C. Both isothermal and isochronal treatments were performed and the annealing kinetics of the prominent divacancy (V 2 ) and vacancy-oxygen ͑VO͒ centers were studied in detail using deep-level transient spectroscopy. The decrease of V 2 centers exhibits first-order kinetics in both Czochralski-grown ͑CZ͒ and float-zone ͑FZ͒ samples, and the data provide strong evidence for a process involving migration of V 2 and subsequent annihilation at trapping centers. The migration energy extracted for V 2 is ϳ1.3 eV and from the shape of the concentration versus depth profiles, an effective diffusion length р0.1 m is obtained. The VO center displays a more complex annealing behavior where interaction with mobile hydrogen ͑H͒ plays a key role through the formation of VOH and VOH 2 centers. Another contribution is migration of VO and trapping by interstitial oxygen atoms in the silicon lattice, giving rise to vacancy-dioxygen pairs. An activation energy of ϳ1.8 eV is deduced for the migration of VO, in close resemblance with results from previous studies using electron-irradiated samples. A model for the annealing of VO, involving only three reactions, is put forward and shown to yield a close quantitative agreement with the experimental data for both CZ and FZ samples over the whole temperature range studied.

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Section: ϫ3mentioning

confidence: 99%

Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implantedn-type silicon

et al. 2001

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“…Fatima et al 2,8 have determined the threshold doses corresponding to the transformation from point defects to extended defects in annealed samples. The threshold dose was shown to depend more strongly on the damage production than on the dose of the implant.…”

Section: Discussionmentioning

confidence: 99%

“…2,8 Both electrical and structural characterization of Si, Ge, and Sn implanted samples consistently reveal that the formation of extended defects occurs at lower doses for heavier mass species. 8 In this study, we report details of the transmission electron microscopy ͑TEM͒ characterization of the extended defects formed in the various samples studied.…”

Section: Introductionmentioning

confidence: 99%

“…There exists a critical dose for defect formation after annealing which is the minimum dose for extended defect formation and below which only point defects are observed. 1,2 Above the critical dose, various types of extended defects are observed in annealed Si: 3 Namely category I defects which are formed from implant doses below the amorphization threshold and category II defects or endof-range defects which are formed below the amorphouscrystalline interface for doses above the amorphization threshold. Category III defects generally result from an imperfect amorphous-crystalline interface.…”

Section: Introductionmentioning

confidence: 99%

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Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon

Wong‐Leung

Fatima

Jagadish

et al. 2000

Journal of Applied Physics

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Triple crystal diffractometry, x-ray standing wave, and transmission electron microscopy investigation of shallow BF 2 implantation in Si J. Vac. Sci. Technol. B 20, 1436 (2002 Extended defects created in Si by ion implantation to doses below the amorphization threshold have been studied after annealing at 800°C for 15 min. The implant species were the group IV elements Si, Ge, and Sn, and structural defects created by similar damage distribution were compared. The mass of the implanted ion influences the type of defect observed. For all three implant species, rod-like ͕311͖ planar defects were observed. Additionally, in Ge and Sn implanted samples, small ͕111͖ interstitial faulted dislocation loops were observed.

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“…Recently there have been several reports on electrically active defects observed in self-ion implanted Si after annealing at temperatures above 500°C. [1][2][3][4] Analyses of the deep level transient spectroscopy ͑DLTS͒ spectra revealed that most of the defect levels observed after post-implantation annealing at temperatures between 500 and 750°C are related to Si self-interstitial clusters. 1 For implant doses of у1ϫ10 13 cm Ϫ2 , the clusters appear to transform between electronic configurations and comparison of the thermal evolution behavior of these defect levels with transmission electron microscopy ͑TEM͒ analyses suggest that the small interstitial clusters are either the precusors of the ͕311͖ defects or that they compete with ͕311͖ defects as sinks for self-interstitials.…”

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Electrically active defects in surface pre-amorphized Si under rapid thermal anneal and their removal by concurrent titanium silicidation

Ashok

Theodore

1999

Applied Physics Letters

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The interstitial-type nature of electrically active defects observed in surface pre-amorphized and subsequently annealed p-type Si is established by comparing the thermal evolution of electrically active defects for rapid thermal anneals (RTA) with/without titanium films. Detailed analyses of the deep level transient spectroscopy (DLTS) and transmission electron microscopy results suggest that some of these defects are small interstitial clusters. The results of this study also suggest that the release of self-interstitials from EOR extended defects and their subsequent diffusion into bulk are involved in the formation of the hole trap levels observed after high temperature RTA anneals. The observation of the complete elimination of the implantation-induced electrically active defects by concurrent RTA Ti-silicidation should be of interest to silicon microelectronic technology since it demonstrates the possibility of eliminating implantation induced defects using low thermal budget.

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Electrical characterization of the threshold fluence for extended defect formation in p-type silicon implanted with MeV Si ions

Cited by 22 publications

References 21 publications

Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implantedn-type silicon

Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implantedn-type silicon

Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon

Electrically active defects in surface pre-amorphized Si under rapid thermal anneal and their removal by concurrent titanium silicidation

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