Electrical characterization of Si-doped conductive AlInN films grown nearly lattice-matched to c-plane GaN on sapphire by metalorganic chemical vapor deposition

Abstract

In this study, Si-doped conductive AlInN films with a thickness of 300 nm were grown nearly lattice-matched to c-plane GaN-on-sapphire templates by metalorganic chemical vapor deposition. A high net donor concentration of approximately 1 × 1019 cm−3 was observed for a highly Si-doped AlInN film. To evaluate its vertical-direction electrical resistivity without being affected by polarization-induced carriers, the transfer length measurement (TLM) model was applied to two kinds of test element groups. By analyzing the TLM results, the vertical-direction resistivity of the 300-nm-thick n-type AlInN film was estimated to be 5.8 × 10−4 Ω cm2.

Near-bandgap optical properties of Al1−x In x N thin films grown on a c-plane freestanding GaN substrate

“…It was reported that Al 1−x In x N alloy grown by the same MOCVD reactor contained high-concentration of oxygen approximately on the order of 10 19 cm −3 and oxygen concentration gradually increased toward the surface from the interface. 33) Thus, it is expected that, in addition to the surface roughness and oxidation layers, the effect of high-concentration of oxygen including Al 1−x In x N possibly included in the surface-layer of the multi-layer model. Thicknesses of the surface-layer were estimated to be in a range of 5.6-9.5 nm.…”

Formation of GaN mesas with reverse-tapered edge structures on a lattice-matched AlInN layer for a positive beveled edge termination

“…[17][18][19][20] Furthermore, the carrier concentration of AlInN can be increased up to ∼10 19 cm −3 by Si and Ge doping. 21,22) The specific contact resistance at the AlInN/GaN interface is as low as 1.5 × 10 −7 Ω cm 2 , 21) and the vertical direction resistivity of a 300 nm thick AlInN layer is as low as 5.8 × 10 −4 Ωcm 2 . 22) These attributes make AlInN a desirable candidate as a sideetching layer material to initiate the formation of reverse tapered edge of GaN for power devices applications.…”

Growth and Microstructure Analyses of Semipolar AlInN Epitaxial Layers on a Fully Relaxed Semipolar {112¯2} GaInN/GaN/m‐plane Sapphire Template

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Ternary AlInN alloys are viewed as useful component materials for GaN-based electronic and optical devices, such as barrier layers in heterostructure field-effect transistors (HFETs), [1,2] or cladding layers, [3,4] distributed Bragg reflectors (DBRs), [5,6] and active layers [7,8] in light-emitting devices. For the past several years, we have conducted intensive research on the epitaxial growth and characterization of c-plane AlInN layers with thicknesses of around 300 nm using metal-organic chemical vapor deposition (MOCVD), [9][10][11][12][13][14][15][16][17][18] as primarily aiming at their application to cladding layers in GaN-based visible laser diodes (LDs). Through those studies, we found the following thing.

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