Formation of GaN mesas with reverse-tapered edge structures on a lattice-matched AlInN layer for a positive beveled edge termination
Takayoshi Oshima,
Masataka Imura,
Yuichi Oshima
Abstract:GaN mesas were fabricated by sequential dry and wet etching of a +c-oriented GaN layer onto a lattice-matched AlInN layer for future applications of positive beveled edge termination, which is desirable for preventing premature breakdown of power devices. The dry etching produced hexagonal AlInN/GaN mesas surrounded by m-plane sidewalls with six protrusions at the vertices. The subsequent hot phosphoric acid etching selectively etched the AlInN layer to expose and etch the chemically unstable −c surface of the… Show more
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