Electrical characterization of semiconductor materials and devices using scanning probe microscopy

Wolf, Peter; Brazel, E. G.; Erickson, A.

doi:10.1016/s1369-8001(00)00174-8

Cited by 49 publications

(31 citation statements)

References 5 publications

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“…For this type of measurements, usually, two different setups are used; conductive atomic force microscope (C-AFM) [1][2][3] and tunneling AFM (TUNA), 4 depending on the range of currents involved. The first is used to measure current in the range of sub-nA to lA, the latter for the range between sub-pA to nA.…”

mentioning

confidence: 99%

Conductivity mapping of nanoparticles by torsional resonance tunneling atomic force microscopy

et al. 2012

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High temperature thermoelectric properties of p-type skutterudites BaxYbyCo4-zFezSb12 J. Appl. Phys. 112, 083718 (2012) Significantly enhanced thermoelectric figure of merit through Cu, Sb co-substitutions for Te in Ga2Te3 Appl. Phys. Lett. 101, 081908 (2012) Thermoelectric properties and Kondo behavior in indium incorporated p-type Ce0.9Fe3.5Ni0.5Sb12 skutterudites J. Appl. Phys. 112, 033710 (2012) Enhancement in the figure of merit of p-type Bi100−xSbx alloys through multiple valence-band doping

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confidence: 99%

Conductivity mapping of nanoparticles by torsional resonance tunneling atomic force microscopy

et al. 2012

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“…28 Unlike other scanning probe-based techniques, C-AFM enables simultaneous and independent acquisition of topography and current maps of samples at fixed voltage and thus highly and poorly conducting regions can be distinguished. [29][30][31] …”

Section: Preparation Of Pani-zno Nano-composite and Panimentioning

confidence: 99%

Growth, Morphology, and Electrical Characterization of Polyaniline–ZnO Nano-composite Langmuir–Blodgett Thin Films

Bhullar

Kaur

Raina

2015

Journal of Elec Materi

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Polyaniline (PANi)-zinc oxide (ZnO) nano-composites were prepared by chemical polymerization of aniline doped with ZnO nanoparticles. Surface pressure-area (p-A) isotherms for the PANi-ZnO nano-composite revealed phase transformations of the monolayer during compression. LangmuirBlodgett (LB) films of PANi and PANi-ZnO nano-composite were characterized by use of UV-visible (UV-Vis) and Fourier-transform infrared spectroscopy, atomic force microscopy, and conductive atomic force microscopy (C-AFM). Local current-voltage (I-V) characteristics revealed the current range for PANi-ZnO nano-composite LB films was larger than that for PANi LB films. Conductive data images were recorded to investigate charge-transport current inhomogeneities in the LB films.

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“…Such measurements require a more sensitive current amplifier, with a lower noise level, and are sometimes referred to as tunneling AFM (TUNA). Other than the characterization of dielectric films, this method can also be used to map samples of low conductivity, and typically measured currents are in the range of tens of fA-100 pA [12].…”

Section: Conductive Atomic Force Microscopymentioning

confidence: 99%

Scanning Probe Microscopy on Inorganic Thin Films for Solar Cells

Sadewasser

Visoly‐Fisher

2011

Advanced Characterization Techniques for Thin Film Solar Cells

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Electrical characterization of semiconductor materials and devices using scanning probe microscopy

Cited by 49 publications

References 5 publications

Conductivity mapping of nanoparticles by torsional resonance tunneling atomic force microscopy

Conductivity mapping of nanoparticles by torsional resonance tunneling atomic force microscopy

Growth, Morphology, and Electrical Characterization of Polyaniline–ZnO Nano-composite Langmuir–Blodgett Thin Films

Scanning Probe Microscopy on Inorganic Thin Films for Solar Cells

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