Electrical characterization of PMN–28%PT(001) crystals used as thin-film substrates

Abstract

Ferroelectric and piezoelectric properties of (001) 0.72PbMg1/3Nb2/3O3–0.28PbTiO3 (PMN–28%PT) single crystals have been investigated from cryogenic temperatures to 475 K. PMN–28%PT is used as piezoelectric substrate, e.g., in multiferroic heterostructures. Electric field-induced phase transformations have been examined by electrical characterization including measurements of polarization loops, dielectric permitivitty, and the resistance change in La0.7Sr0.3MnO3 films deposited on the (001) face. The relaxor ferroelectric transition behavior was studied by means of time-dependent current measurements. A phase diagram is set up. PMN–28%PT is found to be at the border of the appearance of the monoclinc phase (MC) bridging the rhombohedral-tetragonal (R-T) transformation at higher PbTiO3 contents. Measurements of the lattice expansion reveal that a high piezoelectric effect persists down to low temperatures. Therefore, PMN–28%PT single crystals are found to be appropriate substrates for application of piezoelectric strain to thin films over a broad temperature range.

Compositional segregation, structural transformation and property-temperature relationship of high-Curie temperature Pb(In1/2Nb1/2)O3–Pb(Mg1/3Nb2/3)O3–PbTiO3 single crystals

“…T transition; however, the value in E C increased notably only in the M C ? T transition, which is similar to the experiment result reported by Herklotz et al [41]. It can be noticed that for the process of the R ?…”

Development of KNN-Based Piezoelectric Materials

“…Piezoelectrics are finding applications in new emerging areas as well such as micromotors, energy harvesting devices, magnetoelectric sensors, and high power transformers [4][5][6]. Owing to their excellent piezoelectric and ferroelectric properties, PbZr x Ti (1Àx) O 3 (PZT) and other lead-based materials such as Pb(Mg 1/ 3 Nb 2/3 )O 3 (PMN), Pb(Mg 1/3 Nb 2/3 )O 3 -PbTiO 3 (PMN-PT) and Pb(Zn 1/3 Nb 2/3 ) O 3 -PbTiO 3 (PZN-PT) have been dominating the defense and civilian applications in the past few decades [7,8]. But with increasing concern about environment, it is the need of the hour to develop new eco-friendly piezoelectric materials with properties comparable to lead-based piezoelectrics.…”

Strain response of magnetic order in perovskite-type oxide films

“…The level of strain has been recorded for a number of crystals by X-ray diffraction at 300 K. Before the strain measurements, the substrate needs to be poled carefully, increasing the voltage stepwise, at 300 K in a field of about 10 kV cm −1 . For low-temperature measurements, the sample must be fieldcooled from room temperature in order to avoid slow relaxation from domain processes, because the low-temperature coercive field is extremely high, and no stable state of aligned domains can be reached [22]. The temperature dependence of the strain has been evaluated between 300 and 10 K [22] and is found to be weak between 250 and 50 K. At higher temperature (including 300 K), the strain gradually increases towards the Curie temperature of the substrate near 400 K. The lowtemperature drop of the strain is a factor of 3-4 between 50 and 10 K, the origin of it not being well known.…”

“…For low-temperature measurements, the sample must be fieldcooled from room temperature in order to avoid slow relaxation from domain processes, because the low-temperature coercive field is extremely high, and no stable state of aligned domains can be reached [22]. The temperature dependence of the strain has been evaluated between 300 and 10 K [22] and is found to be weak between 250 and 50 K. At higher temperature (including 300 K), the strain gradually increases towards the Curie temperature of the substrate near 400 K. The lowtemperature drop of the strain is a factor of 3-4 between 50 and 10 K, the origin of it not being well known. Care must be taken, because differences in the composition may lead to different strain levels because of the closeness of the morphotropic phase boundary of the PMN-PT.…”