Electrical characterization of photo-oxidized Si1−x−yGexCy films

Bjeletich, P.; Peterson, John J.; Cuadras, A.; Fang, Q.; Zhang, Junying; Robinson, M.; Boyd, Ian W.; Hunt, Charles E.

doi:10.1016/j.mee.2003.12.040

Cited by 2 publications

(1 citation statement)

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“…The doping density data extracted from C-V plots (table 2) are in agreement with SIMS boron profile data [20,21]. The presence of kinks or plateaus in the C-V curves of SiGeC samples has been reported in the literature [35,36] and attributed to the formation of interface defects caused by both the carbon excess in interstitial positions at the interface and the Ge accumulation ('pileup') generated during the oxidation. Since in this study the sacrificial silicon capping layers as well as low-temperature plasma oxidation process (for oxide growth) were used for all Si 1−x−y Ge x C y samples, quite low midgap interface states density of ∼10 11 cm −2 eV −1 was observed indicating the reasonably good quality of the interface.…”

Section: Electrical Characterization Resultssupporting

confidence: 84%

Substitutional C effect on generation lifetime in MBE-grown SiGeC layers

Mitrović¹,

Hall²

2008

Semicond. Sci. Technol.

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This paper investigates the effect of substitutional carbon on generation lifetime in pseudomorphically strained Si 1−x−y Ge x C y (x ∼ 0.1, y < 0.006) layers grown by gas source molecular beam epitaxy (GSMBE). The electrical assessment consists of capacitance-voltage and capacitance transient techniques on metal-oxide-semiconductor (MOS) capacitors based on Si/SiGeC heterostructures. The carrier lifetime study shows microsecond range lifetimes for substitutional carbon contents, [C s ] < 0.5%. The charge confinement in the potential well, formed at the SiGeC/Si heterointerface, is found to have less effect on generation lifetime than the substitutional to interstitial carbon ratio in these alloys. Samples with substitutional carbon concentrations above 0.5% exhibit a sharp decrease of generation lifetime into the nanosecond range, attributed to an increased ratio of interstitial carbon. Si 0.8826 Ge 0.116 C 0.0014 and Si 0.8809 Ge 0.116 C 0.0031 layers grown by GSMBE can be used in high-performance heterojunction bipolar transistors (HBTs).

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