Electrical characterization of PbZr0.4Ti0.6O3 capacitors

Abstract

We have conducted a careful study of current-voltage (I-V ) characteristics in fully integrated commercial PbZr 0.4 Ti 0.6 O 3 thin film capacitors with Pt bottom and Ir/IrO 2 top electrodes. Highly reproducible steady state I-V were obtained at various temperatures over two decades in voltage from current-time data and analyzed in terms of several common transport models including space charge limited conduction, Schottky thermionic emission under full and partial depletion and Poole-Frenkel conduction, showing that the later is the most plausible leakage mechanism in these high quality films. In addition, ferroelectric hysteresis loops and capacitance-voltage data were obtained over a large range of temperatures and discussed in terms of a modified Landau-Ginzburg-Devonshire theory accounting for space charge effects. * Electronic address: pz212@cam.ac.uk † Also at Advanced Technology Team, Semiconductor R&D Center,

Interfacial engineering and coupling of electric and magnetic properties in Pb(Zr0.53Ti0.47)O3/CoFe2O4 multiferroic epitaxial multilayers

“…The effective coefficients describing the dielectric susceptibility and polarization will also be rescaled. Therefore, the in-plane compressive stress in the epitaxial structure may influence the polarization behavior near the interfacial region, which will in turn, influence the distribution of space charge 18 and be responsible for the observed dielectric nature of PZT/CFO multilayer nanocomposite films.…”

Anomalous change in leakage and displacement currents after electrical poling on lead-free ferroelectric ceramics

“…To further investigate the conduction mechanisms for bulk electroceramics, three main mechanisms have been considered, conventional Schottky emission (SE), 32 bulk-limited Poole-Frenkel (PF), 33 and SCLC conduction mechanisms. 34 Charge transport at high E-field is usually determined by the interface limited.…”

Photoconductivity and photo-detection response of multiferroic bismuth iron oxide

“…In the literature several conduction mechanisms have been proposed to find out for conduction in the dielectric: Schottky emission (SE), Poole-Frenkel emission (PF), and space charge limited conduction (SCLC). [22][23][24] These three basic mechanisms represent the interface, bulk, and freecharge carriers injection as function of applied external fields and temperatures, respectively. In case of SE, log (I/T 2 ) vs V 1/2 should gives a straight line having slope near to the optical dielectric constant of the materials.…”