Photoconductivity and photo-detection response of multiferroic bismuth iron oxide

Abstract

Articles you may be interested inA large polarization in Ce-modified bismuth ferrite thin films

Giant enhancement in ferroelectric polarization under illumination

“…To determine the lifetimes of slow and fast charge carriers during the growth and decay process, the ON/OFF currents, were fitted to the model below. 52,53,54 Equation 1 is used to fit the experimental data of decay process.…”

Switchable photovoltaic and polarization modulated rectification in Si-integrated Pt/(Bi0.9Sm0.1)(Fe0.97Hf0.03)O3/LaNiO3 heterostructures

“…[1][2][3][4][5][6][7][8] BiFeO 3 (BFO) is one of the most studied lead free room temperature multiferroic perovskite oxide because of its fascinating physical properties; large polarization (90µC/cm 2 ), weak ferromagnetism, and optical bandgap (~2.67 eV) [9][10][11][12] lies in visible region, make it suitable multifunctional material for spintronics, data storage, sensors, and optoelectronic applications. [13][14][15][16][17] Recently, the single phase BFO thin films showed promising potential towards ferroelectric photovoltaic (Fe˗PV) application due to enhanced room temperature ferroelectricity and small optical bandgap. [17][18][19][20] Among other wide bandgap Fe˗PV materials (i.e., BaTiO 3 , LiNbO 3 and Pb(Zr,Ti)O 3 ), BFO exhibits large open circuit voltage (V OC ), tunable output, and switchable photodiode effect 6,[9][10][11] .…”

“…[13][14][15][16][17] Recently, the single phase BFO thin films showed promising potential towards ferroelectric photovoltaic (Fe˗PV) application due to enhanced room temperature ferroelectricity and small optical bandgap. [17][18][19][20] Among other wide bandgap Fe˗PV materials (i.e., BaTiO 3 , LiNbO 3 and Pb(Zr,Ti)O 3 ), BFO exhibits large open circuit voltage (V OC ), tunable output, and switchable photodiode effect 6,[9][10][11] . It has been reported that the polarization flipping induced modulation of Schottky-like barrier at metal/ferroelectric interface leads switchable PV and diode effect in BFO thin film heterostructures.…”

Negative-capacitance and bulk photovoltaic phenomena in gallium nitride nanorods network

“…However, the response time of the GaN nanorods network was several order higher in the range of 100 ms compared to bulk photovoltaic devices and detectors (seconds per milliseconds). [41][42][43][44][45] The capacitance characteristics of the nanorods network demonstrate the presence of NC, a suitable candidate for metamaterials.…”