IEEE Trans. Nucl. Sci.
 1999
DOI: 10.1109/23.790686
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Electrical characterization of oxide and Si/SiO/sub 2/ interface of irradiated NMOS transistors at low radiation doses

Boualem Djezzar
1
,
Abdelwaheb Amrouche
2
,
A. Smatti
3
et al.
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Cited by 11 publications
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