Electrical Characterization of Ordered Si:P Dopant Arrays

Pok, W.; Reusch, T. C. G.; Scappucci, Giordano; Rueb, F.J.; Hamilton, A. R.; Simmons, M. Y.

doi:10.1109/tnano.2007.891823

Cited by 17 publications

(13 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…3,4 Phosphorus ␦-doped silicon is particularly interesting for its relevance to nanoelectronic device fabrication including the possibility of quantum computers. 5-7 Various prototype Si:P devices are currently being developed 5,[8][9][10][11][12][13][14][15] in which patterned ␦-doped layers form conducting leads and gate electrodes. These developments warrant and motivate detailed theoretical studies into the baseline electronic properties of phosphorus ␦-doped silicon.…”

mentioning

confidence: 99%

Electronic structure models of phosphorusδ-doped silicon

et al. 2009

View full text Add to dashboard Cite

We report a density-functional theory treatment of phosphorus ␦-doped silicon. Using large asymmetric unit cells with up to 800 atoms, we obtain first-principles doping potentials, band energies, and donor-electron distributions. The explicit and nonempirical description of both valence and donor electrons improves upon previous models of this system. The effects of overlapping ␦-doping potentials in smaller systems are adequately captured using a uniform band alignment shift.Delta doping describes the process in which the placement of dopant atoms is limited to a narrow plane in the host material. 1,2 This creates an approximately V-shaped doping potential in the plane-perpendicular direction, in which electron or hole carriers are trapped to form two-dimensional gases with a number of technologically useful properties. 3,4 Phosphorus ␦-doped silicon is particularly interesting for its relevance to nanoelectronic device fabrication including the possibility of quantum computers. 5-7 Various prototype Si:P devices are currently being developed 5,[8][9][10][11][12][13][14][15] in which patterned ␦-doped layers form conducting leads and gate electrodes. These developments warrant and motivate detailed theoretical studies into the baseline electronic properties of phosphorus ␦-doped silicon. A particular difficulty of this

show abstract

mentioning

confidence: 99%

Electronic structure models of phosphorusδ-doped silicon

et al. 2009

View full text Add to dashboard Cite

show abstract

“…Efforts to make such devices have led to atomically precise fabrication methods which incorporate phosphorus atoms in a single monolayer of a silicon crystal [17-20]. These dopant atoms can be arranged into arrays [21] or geometric patterns for wires [16,22] and associated tunnel junctions [23], gates, and quantum dots [24,25] - all of which are necessary components of a functioning device [26]. The patterns themselves define atomically abrupt regions of doped and undoped silicon.…”

Section: Introductionmentioning

confidence: 99%

Ab initio calculation of valley splitting in monolayer δ-doped phosphorus in silicon

et al. 2013

View full text Add to dashboard Cite

The differences in energy between electronic bands due to valley splitting are of paramount importance in interpreting transport spectroscopy experiments on state-of-the-art quantum devices defined by scanning tunnelling microscope lithography. Using vasp, we develop a plane-wave density functional theory description of systems which is size limited due to computational tractability. Nonetheless, we provide valuable data for the benchmarking of empirical modelling techniques more capable of extending this discussion to confined disordered systems or actual devices. We then develop a less resource-intensive alternative via localised basis functions in siesta, retaining the physics of the plane-wave description, and extend this model beyond the capability of plane-wave methods to determine the ab initio valley splitting of well-isolated δ-layers. In obtaining an agreement between plane-wave and localised methods, we show that valley splitting has been overestimated in previous ab initio calculations by more than 50%.

show abstract

“…Independent measurements of the I-V characteristics across the side contact patches R 1-2 and R [3][4] show linear I-V characteristics indicating ohmic behaviour [19]. The I-V characteristics across all contacts, are highly symmetric indicating that the electrical characteristics of the array are independent of the contact resistances at 4K.…”

Section: Current Resultsmentioning

confidence: 91%

Atomically precise silicon device fabrication

Simmons

Rueß

Pok

et al. 2007

2007 7th IEEE Conference on Nanotechnology (IEEE NANO)

Self Cite

View full text Add to dashboard Cite

An important driving force behind the microelectronics industry is the ability to pack ever more features onto a silicon chip, by continually miniaturising the individual components. However, after 2015 there is no known technological route to reduce devices below 10nm. We demonstrate a complete fabrication strategy towards atomic-scale device fabrication in silicon using phosphorus as a dopant in combination with scanning probe lithography and high purity, low temperature crystal growth. A major advantage of this strategy is the ability to investigate the role of dopant placement and atomically controlled growth on electronic device operation.

show abstract

Electrical Characterization of Ordered Si:P Dopant Arrays

Cited by 17 publications

References 23 publications

Electronic structure models of phosphorusδ-doped silicon

Electronic structure models of phosphorusδ-doped silicon

Ab initio calculation of valley splitting in monolayer δ-doped phosphorus in silicon

Atomically precise silicon device fabrication

Contact Info

Product

Resources

About