Electrical characterization of Ni/Al0.09Ga0.91N Schottky barrier diodes as a function of temperature

Akkaya, Abdullah; Esmer, L.; Karaaslan, Tuncay; Çetin, H.; Ayyıldız, E.

doi:10.1016/j.mssp.2014.07.053

Cited by 10 publications

(2 citation statements)

References 42 publications

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“…It has been said that the barrier inhomogeneity in the annealed diode arises with increasing measurement temperature. The similar examples with two or more regions for the plot of Φ ap vs. (2k T ) −1 have been also reported by other authors [70,[185][186][187].…”

Section: The Inhomogeneous Barrier Analysis and Mean Barrier Height In I-v-t Characteristicssupporting

confidence: 87%

Oncurrent-voltage and capacitance-voltage characteristics of metal-semiconductor contacts

Türüt¹

2020

Turk J Phys

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It is expected the fact that the current following across metal-semiconductor (MS) rectifying contact named as Schottky barrier diode (SBDs) and effect of sample temperature on their electrical properties obey thermionic emission (TE) current model. But, it has been seen that the abnormal behaviors in the measured electrical characteristics cannot be exactly understood by the classical TE transport theory. In the literature, the observed abnormal behaviors have been successfully explained by a Gaussian distribution function and by the pinch-off model being interaction of the neighbor patches suggested by Tung and coworkers, the named discrete regions model as "patches" with low barrier placed in a higher uniform barrier area.

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Section: The Inhomogeneous Barrier Analysis and Mean Barrier Height In I-v-t Characteristicssupporting

confidence: 87%

Oncurrent-voltage and capacitance-voltage characteristics of metal-semiconductor contacts

Türüt¹

2020

Turk J Phys

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“…1) Recently, the GaN-based SBDs have attracted significant attention on high power and frequency due to the outstanding properties of the material, such as the high breakdown field, good thermal properties and high electron mobility. [2][3][4][5][6][7][8][9][10][11] However, normal AlGaN/ GaN planar SBDs has an undesired high turn-on voltage (V on ) owning to the wide bandgap nature of the material, leading to a considerable conduction loss and seriously degrades the efficiency of circuit and system. 12,13) Recently, various approaches have been proposed to reduce the V on of AlGaN/GaN SBD, and the recessed AlGaN/GaN SBD is one of most effective ways to reduce V on while maintaining high reverse blocking capability.…”

mentioning

confidence: 99%

Effect of oxygen plasma treatment on the performance of recessed AlGaN/GaN Schottky barrier diodes

Mao¹,

Xu²,

Yang³

et al. 2022

Appl. Phys. Express

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The treatment effect of the oxygen plasma on the performance of recessed AlGaN/GaN Schottky barrier diodes has been investigated. After the oxygen plasma treatment, the turn-on voltage and reverse leakage current are slightly changed, while the current collapse could be effectively mitigated. The X-ray photoelectron spectroscopy results suggest that a thin surface oxide layer is formed by the oxygen plasma treatment, which is responsible for the reduced current collapse. In addition, the device with oxygen plasma treatment has a relatively more inhomogeneous barrier height.

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Temperature analysis of the Gaussian distribution modeling the barrier height inhomogeneity in the Tungsten/4H-SiC Schottky diode

Toumi

Ouennoughi

Weiß³

2021

Appl. Phys. A

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Electrical characterization of Ni/Al0.09Ga0.91N Schottky barrier diodes as a function of temperature

Cited by 10 publications

References 42 publications

Oncurrent-voltage and capacitance-voltage characteristics of metal-semiconductor contacts

Oncurrent-voltage and capacitance-voltage characteristics of metal-semiconductor contacts

Effect of oxygen plasma treatment on the performance of recessed AlGaN/GaN Schottky barrier diodes

Temperature analysis of the Gaussian distribution modeling the barrier height inhomogeneity in the Tungsten/4H-SiC Schottky diode

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