Electrical characterization of large volume CdZnTe coplanar detectors

González, R.; Pérez, J. M.; Vela, O.; Burgos, E. de; Oller, J.C.; Gostilo, V.

doi:10.1016/j.nima.2005.03.147

Cited by 14 publications

(4 citation statements)

References 15 publications

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“…The diffusion model has been utilized for analyzing the I–V characteristics of the CsPbBr 3 detector [ 21 , 22 , 23 , 24 , 25 ]. In the diffusion model, the current density

under the reverse bias

in a metal-semiconductor Schottky device can be described as:

where q is the electron charge, μ is the carrier mobility, N c is the effective density of states in the conduction band, N i is the concentration of the ionized donor/acceptor centers, ε is the electrical permittivity in the crystal, d is the thickness of the device, V in is the built-in internal electric field, k is Boltzmann’s constant, T is temperature, and ϕ is Schottky barrier [ 24 ].…”

Section: Resultsmentioning

confidence: 99%

The Total Ionizing Dose Effects on Perovskite CsPbBr3 Semiconductor Detector

Liu

Qin

et al. 2023

Sensors

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Perovskite CsPbBr3 semiconductors exhibit unusually high defect tolerance leading to outstanding and unique optoelectronic properties, demonstrating strong potential for γ-radiation and X-ray detection at room temperature. However, the total dose effects of the perovskite CsPbBr3 must be considered when working in a long-term radiation environment. In this work, the Schottky type of perovskite CsPbBr3 detector was fabricated. Their electrical characteristics and γ-ray response were investigated before and after 60Co γ ray irradiation with 100 and 200 krad (Si) doses. The γ-ray response of the Schottky-type planar CsPbBr3 detector degrades significantly with the increase in total dose. At the total dose of 200 krad(Si), the spectral resolving ability to γ-ray response of the CsPbBr3 detector has disappeared. However, with annealing at room temperature for one week, the device’s performance was partially recovered. Therefore, these results indicate that the total dose effects strongly influence the detector performance of the perovskite CsPbBr3 semiconductor. Notably, it is concluded that the radiation-induced defects are not permanent, which could be mitigated even at room temperature. We believe this work could guide the development of perovskite detectors, especially under harsh radiation conditions.

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“…The diffusion model has been utilized for analyzing the I–V characteristics of the CsPbBr 3 detector [ 21 , 22 , 23 , 24 , 25 ]. In the diffusion model, the current density

under the reverse bias

in a metal-semiconductor Schottky device can be described as:

Section: Resultsmentioning

confidence: 99%

The Total Ionizing Dose Effects on Perovskite CsPbBr3 Semiconductor Detector

Liu

Qin

et al. 2023

Sensors

View full text Add to dashboard Cite

show abstract

“…4 shows that, in an ideal electrostatic case, the detector design leads to a proper charge collection. From previous works with similar detectors [11] we can infer that for good quality detectors the real electric field is not too far from the electrostatic approach.…”

Section: Effects Ofcharge Transportmentioning

confidence: 93%

Recent developments on high spatial resolution CdZnTe pixel detectors

Pérez

2008

2008 IEEE Nuclear Science Symposium Conference Record

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“…In metal/semiconductor contacts and devices, charge transport is generally divided into drift and diffusion. The current density in metal-semiconductor devices can be described by (1) when the charge is mainly transported by a single kind of carrier (electron) [28], [29]…”

Section: A Diffusion-limited Transport Model For a Semiconductor/meta...mentioning

confidence: 99%

Simulation of the Charge Collection in a Nonuniform Electric Field for MAPbI₃ Semiconductor Nuclear Detector With Schottky Contact

Meng

Qin

et al. 2022

IEEE Trans. Nucl. Sci.

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The Hecht equation is often used to calculate the 1 mobility-lifetime product (μτ ) of semiconductors by assuming 2 a uniform electric field based on the Shockley-Ramo theory. 3 However, the Schottky contacts are usually found at high resis-4 tivity semiconductor/metal interface, leading to a nonuniform 5 electric field inside the bulk semiconductor. We used a slice model 6 instead of the Hecht equation to calculate the charge collection 7 efficiency (CCE) and found that the CCE in a nonuniform field 8 can deviate significantly from that given by the Hecht equation in 9 a uniform field, with the difference relying heavily on the space 10 charge distribution and the μτ value. For semiconductors with 11 a high ionized acceptor impurity concentration of 5 × 10 9 cm −3 , 12 such as MAPbI 3 , the electron μτ value may be seriously 13 underestimated when adopting the Hecht equation assuming a 14 uniform field. The invalid application of the Hecht equation for 15 a Schottky interface may be one of the possible reasons for 16 the underestimation of electron μτ value for p-type perovskite 17 materials with relatively low resistivity. 18 Index Terms-Hecht equation, MAPbI 3 single crystal, 19 mobility-lifetime product. 20 23 due to their excellent carrier transport properties [1]-[9]. For 24 example, Dong et al. [10] reported first an excellent long 25 diffusion length of 175 μm for a MAPbI 3 single crystal.

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Electrical characterization of large volume CdZnTe coplanar detectors

Cited by 14 publications

References 15 publications

The Total Ionizing Dose Effects on Perovskite CsPbBr3 Semiconductor Detector

The Total Ionizing Dose Effects on Perovskite CsPbBr3 Semiconductor Detector

Recent developments on high spatial resolution CdZnTe pixel detectors

Simulation of the Charge Collection in a Nonuniform Electric Field for MAPbI₃ Semiconductor Nuclear Detector With Schottky Contact

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Electrical characterization of large volume CdZnTe coplanar detectors

Cited by 14 publications

References 15 publications

The Total Ionizing Dose Effects on Perovskite CsPbBr3 Semiconductor Detector

The Total Ionizing Dose Effects on Perovskite CsPbBr3 Semiconductor Detector

Recent developments on high spatial resolution CdZnTe pixel detectors

Simulation of the Charge Collection in a Nonuniform Electric Field for MAPbI3 Semiconductor Nuclear Detector With Schottky Contact

Contact Info

Product

Resources

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Simulation of the Charge Collection in a Nonuniform Electric Field for MAPbI₃ Semiconductor Nuclear Detector With Schottky Contact