1992
DOI: 10.1007/978-3-642-84804-9_62
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Electrical Characterization of Epitaxial Titanium Contacts to Alpha (6H) Silicone Carbide

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Cited by 3 publications
(1 citation statement)
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“…The effect of post annealing of Schottky contacts on the forward current-voltage characteristics has been studied by several groups. Spellman et al 8 reported the effect of annealing conditions on Ti/6H-SiC Schottky diodes. A degradation of characteristics in the linear regime was observed after the first 20-minute annealing in UHV at 700∞C.…”
Section: Introductionmentioning
confidence: 99%
“…The effect of post annealing of Schottky contacts on the forward current-voltage characteristics has been studied by several groups. Spellman et al 8 reported the effect of annealing conditions on Ti/6H-SiC Schottky diodes. A degradation of characteristics in the linear regime was observed after the first 20-minute annealing in UHV at 700∞C.…”
Section: Introductionmentioning
confidence: 99%