Chapter 3 Building Blocks for SiC Devices: Ohmic Contacts, Schottky Contacts, and p-n Junctions

Saxena, Vishal; Steckl, A. J.

doi:10.1016/s0080-8784(08)62845-8

Cited by 30 publications

(23 citation statements)

References 113 publications

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“…SiC epitaxial wafers were grown at Linköping University (Linköping, Sweden) via hot-wall chemical vapor deposition (CVD) [ 34 , 35 ]. A ~5 µm thick, low-doped (aluminum) p-type epitaxial layer of 4H-SiC was homoepitaxially grown on a quarter wafer of 4° off-axis 4H-SiC (0001) [ 36 ]. The doping density of the p-type base epitaxial layer was ~1 × 10 16 cm −3 .…”

Section: Methodsmentioning

confidence: 99%

Demonstration of a Robust All-Silicon-Carbide Intracortical Neural Interface

Bernardin

Frewin²,

Everly³

et al. 2018

Micromachines

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Intracortical neural interfaces (INI) have made impressive progress in recent years but still display questionable long-term reliability. Here, we report on the development and characterization of highly resilient monolithic silicon carbide (SiC) neural devices. SiC is a physically robust, biocompatible, and chemically inert semiconductor. The device support was micromachined from p-type SiC with conductors created from n-type SiC, simultaneously providing electrical isolation through the resulting p-n junction. Electrodes possessed geometric surface area (GSA) varying from 496 to 500 K μm2. Electrical characterization showed high-performance p-n diode behavior, with typical turn-on voltages of ~2.3 V and reverse bias leakage below 1 nArms. Current leakage between adjacent electrodes was ~7.5 nArms over a voltage range of −50 V to 50 V. The devices interacted electrochemically with a purely capacitive relationship at frequencies less than 10 kHz. Electrode impedance ranged from 675 ± 130 kΩ (GSA = 496 µm2) to 46.5 ± 4.80 kΩ (GSA = 500 K µm2). Since the all-SiC devices rely on the integration of only robust and highly compatible SiC material, they offer a promising solution to probe delamination and biological rejection associated with the use of multiple materials used in many current INI devices.

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Section: Methodsmentioning

confidence: 99%

Demonstration of a Robust All-Silicon-Carbide Intracortical Neural Interface

Bernardin

Frewin²,

Everly³

et al. 2018

Micromachines

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“…Over the past six years or so, several other groups have investigated highvoltage ( 100 V) Schottky diodes on SiC [6]- [8], [16]- [18], and [24]- [29]. The various device approaches and resulting characteristics are summarized in Table V of the review by Saxena and Steckl [23].…”

Section: Discussionmentioning

confidence: 99%

High-voltage Ni- and Pt-SiC Schottky diodes utilizing metal field plate termination

Saxena

Steckl

1999

IEEE Trans. Electron Devices

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192

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Abstract-We have fabricated 1 kV 4H and 6H SiC Schottky diodes utilizing a metal-oxide overlap structure for electric field termination. This simple structure when used with a high barrier height metal such as Ni has consistently given us good yield of Schottky diodes with breakdown voltages in excess of 60% of the theoretically calculated value. This paper presents the design considerations, the fabrication procedure, and characterization results for these 1 kV Ni-SiC Schottky diodes. Comparison to similarly fabricated Pt-SiC Schottky diodes is reported. The Ni-SiC ohmic contact formation has been studied using Auger electron spectroscopy and X-ray diffraction. The characterization study includes measurements of current-voltage (I0V ) temperature and capacitance-voltage (C0V ) temperature characteristics. The high-temperature performance of these diodes has also been investigated. The diodes show good rectifying behavior with ON/OFF current ratios, ranging from 10 6 to 10 7 at 27 C and in excess of 10 6 up to 300 C.

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“…Although in their review papers Porter et al 9 and Saxena et al 12 reported on very early literature works on ohmic contacts to n-type 6H-SiC fabricated using chromium or tungsten, ohmic contacts to n-type SiC have been extensively investigated only in the last decade. In fact, during this time, the improvement of material quality, as long as that of doping techniques during epitaxial growth, resulted in the availability of good quality highly doped epitaxial layers.…”

Section: Ohmic Contacts To N-type Sicmentioning

confidence: 99%

Ohmic Contacts To

Roccaforte¹,

Via²,

Raineri³

2006

Sic Materials and Devices

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In this chapter, the most significant results obtained in the last decade in the field of ohmic contacts to SiC are reviewed. First, the basic concepts related to the physics of ohmic contacts and to the contact resistance measurement techniques are briefly reported. Then, some aspects concerning the formation of low resistance (10~5-10~6 £2cm 2 ) ohmic contacts on n-type and for p-type SiC are discussed, focusing on Ni-based and Al/Tibased contacts. Examples of innovative applications on practical devices are also reported, as the simultaneous formation of ohmic contacts on n-and p-type SiC for vertical power MOS devices, obtained adding Al to a standard Ni contact, and a single-metal technology for ohmic and rectifying contacts in MESFETs, using Ti or Ni without post-deposition annealing.

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Chapter 3 Building Blocks for SiC Devices: Ohmic Contacts, Schottky Contacts, and p-n Junctions

Cited by 30 publications

References 113 publications

Demonstration of a Robust All-Silicon-Carbide Intracortical Neural Interface

Demonstration of a Robust All-Silicon-Carbide Intracortical Neural Interface

High-voltage Ni- and Pt-SiC Schottky diodes utilizing metal field plate termination

Ohmic Contacts To

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