Electrical characterization of a pre-ceramic polymer modified Ag/poly(hydridocarbyne)/p-Si Schottky barrier diode

Electrical characterization of metal/diamond-like carbon/inorganic semiconductor MIS Schottky barrier diodes

“…Details on the calculation of the ideality factor (n) and barrier height (Φ b ) can be found elsewhere [17,18,28,31,[35][36][37][38]. Using thermionic emission (TE) theory, n and Φ b values of the diodes were calculated from the slope and the current axis intercept of the linear region of the forward-bias I-V plot, respectively.…”

“…Details on the determination of n, Φ b and R s values using CheungCheung method can be found elsewhere [17]. Using Eq.…”

“…Extensive studies have been carried out with the intention of modification and control of barrier height using an organic semiconducting or insulating interlayer and or to determine characteristic parameters of these devices. Many authors have reported that Schottky barrier could be either increased or decreased by using an interlayer between semiconductor and metal [17][18][19][20][21][22].…”

Investigation of photon-induced effects on some diode parameters and negative capacitance of the Schottky structure with Zn-doped organic polymer (PVA) interface

“…Improving the electronic properties and performance of the Schottky devices due to their various application areas through the transistors to solar cells is the focus of many studies reported in the literature [1][2][3][4][5][6][7]. Besides, SiO 2 and SnO 2 interfacial layers, which have been used frequently between metal and semiconductor until today, cannot whole saturate the active dangling-bonds at the surface, which has led to the demand for the use of various interfaces between metal and semiconductor [7][8][9][10][11][12][13][14][15][16][17][18][19]. Due to their low expenditure and ease of production, using polymer materials as an interlayer in the fabrication of MS devices has become one of the intriguing research areas.…”

“…Due to their low expenditure and ease of production, using polymer materials as an interlayer in the fabrication of MS devices has become one of the intriguing research areas. In this respect, polypyrrole (PPy), polyvinylidene fluoride (PVDF), poly 3-substituted thiophene (P3DMTFT), polyvinyl-pyrrolidone (PVP), and polyvinyl alcohol (PVA) are some of those polymers used between M/S interface [15][16][17][18][19][20][21][22]. However, the poor conductivity of organic/polymer materials compared to inorganic materials is the most challenging issue in their use of them for this purpose.…”