Electrical Characterization and Analysis of 4H-SiC Lateral MOSFET (LMOS) for High-Voltage Power Integrated Circuits

Liu, Li; Wang, Jue; Wang, Zishi; Bai, Miaoguang; Li, Junze; Zhu, Zhengyun; Xu, Hongyi; Ren, Na; Guo, Qing; Sheng, Kuang

doi:10.1109/ispsd57135.2023.10147418

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2024

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“…In 2019, based on the D-RESURF structure, Yun et al proposed a 4H-SiC lateral MOSFET incorporating a P-top layer, aiming to decrease the E-field at the drift region adjacent to the P-well [54] . Fig.…”

Section: Resurf Technologymentioning

confidence: 99%

Review of the SiC LDMOS power device

Hu,

Yao,

et al. 2024

J. Semicond.

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Silicon carbide (SiC), as a third-generation semiconductor material, possesses exceptional material properties that significantly enhance the performance of power devices. The SiC lateral double-diffused metal–oxide–semiconductor (LDMOS) power devices have undergone continuous optimization, resulting in an increase in breakdown voltage (BV) and ultra-low specific on-resistance (R on,sp). This paper has summarized the structural optimizations and experimental progress of SiC LDMOS power devices, including the trench-gate technology, reduced surface field (RESURF) technology, doping technology, junction termination techniques and so on. The paper is aimed at enhancing the understanding of the operational mechanisms and providing guidelines for the further development of SiC LDMOS power devices.

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Section: Resurf Technologymentioning

confidence: 99%