1.43 kV 4H-SiC Lateral Junction Barrier Schottky Diode With High BFOM (390 MW/cm<sup>2</sup>)

Liu, Li; Wang, Jue; Ren, Na; Guo, Qing; Sheng, Kuang

doi:10.1109/led.2024.3404041

IEEE Electron Device Lett.

2024

DOI: 10.1109/led.2024.3404041

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1.43 kV 4H-SiC Lateral Junction Barrier Schottky Diode With High BFOM (390 MW/cm²)

Li Liu,

Jue Wang,

Na Ren

et al.

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A Review of Diamond Materials and Applications in Power Semiconductor Devices

Zhao,

He,

Huang

et al. 2024

Materials

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Diamond is known as the ultimate semiconductor material for electric devices with excellent properties such as an ultra-wide bandgap (5.47 eV), high carrier mobility (electron mobility 4000 cm2/V·s, hole mobility 3800 cm2/V·s), high critical breakdown electric field (20 MV/cm), and high thermal conductivity (22 W/cm·K), showing good prospects in high-power applications. The lack of n-type diamonds limits the development of bipolar devices; most of the research focuses on p-type Schottky barrier diodes (SBDs) and unipolar field-effect transistors (FETs) based on terminal technology. In recent years, breakthroughs have been made through the introduction of new structures, dielectric materials, heterogeneous epitaxy, etc. Currently, diamond devices have shown promising applications in high-power applications, with a BV of 10 kV, a BFOM of 874.6 MW/cm2, and a current density of 60 kA/cm2 already realized. This review summarizes the research progress of diamond materials, devices, and specific applications, with a particular focus on the development of SBDs and FETs and their use in high-power applications, aiming to provide researchers with the relevant intuitive parametric comparisons. Finally, the paper provides an outlook on the parameters and development directions of diamond power devices.

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A Review of Diamond Materials and Applications in Power Semiconductor Devices

Zhao,

He,

Huang

et al. 2024

Materials

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show abstract

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1.43 kV 4H-SiC Lateral Junction Barrier Schottky Diode With High BFOM (390 MW/cm²)

Cited by 1 publication

References 23 publications

A Review of Diamond Materials and Applications in Power Semiconductor Devices

A Review of Diamond Materials and Applications in Power Semiconductor Devices

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1.43 kV 4H-SiC Lateral Junction Barrier Schottky Diode With High BFOM (390 MW/cm2)

Cited by 1 publication

References 23 publications

A Review of Diamond Materials and Applications in Power Semiconductor Devices

A Review of Diamond Materials and Applications in Power Semiconductor Devices

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Product

Resources

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1.43 kV 4H-SiC Lateral Junction Barrier Schottky Diode With High BFOM (390 MW/cm²)