Electrical characteristics relaxation of ion milled MCT layers

Іжнін, І. І.; Bogoboyashchyy, V. V.; Sizov, Fiodor F.

doi:10.1117/12.617389

Cited by 12 publications

(15 citation statements)

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“…1. Envelopes of mobility spectra at 77 K for the MBE film #2: annealed sample (1), after ion milling and ageing for 20 (2), 200 (3), 1380 (4), 231600 (5) min, and after removing 0.7 µm thick surface layer by chemical etching (6).…”

Section: Resultsmentioning

confidence: 99%

“…It appeared also that strongly non-equilibrium processes which take place under ion milling, when a crystal is oversaturated with interstitial mercury atoms Hg I [2,3], allowed one to detect defects that did not show their presence before the milling because of electrical compensation [4,5]. The character of post-milling relaxation of electrical properties of MCT allows for identifying background dopants, which are hard to detect using secondary-ion mass-spectroscopy (SIMS) [6].…”

Section: Introductionmentioning

confidence: 99%

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Study of the Defect Structure of Hg_1-xCd_xTe Films by Ion Milling

Pociask

Іжнін²,

Ilyina³

et al. 2008

Acta Phys. Pol. A

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A study of the defect structure of heteroepitaxially grown Hg1−xCdxTe (MCT) films was performed with the use of ion milling. Undoped and in situ As-(acceptor) or In-(donor) doped films with x = 0.22, grown by molecular beam epitaxy on GaAs substrates, as-grown and annealed, were subjected to ion milling with subsequent electrical characterization. The results obtained on the MBE films were compared to those acquired on wafers cut from bulk crystals, and on epitaxial films grown by liquid and vapor phase epitaxy. In all the MBE films ion milling revealed a presence of a neutral defect with concentration ≈ 10 17 cm −3 , formed at the stage of the growth. Residual donor concentration in the films was found to be of the order of 10 15 cm −3 , which is typical of high-quality MCT.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Study of the Defect Structure of Hg_1-xCd_xTe Films by Ion Milling

Pociask

Іжнін²,

Ilyina³

et al. 2008

Acta Phys. Pol. A

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“…It is evident that n 77 and m n77 changed at room temperature. The dependence of the n 77 on the age− ing time t for all the samples was exponential (which is typi− cal of the disintegration of donor centres (complexes) formed under ion milling [4]) and had two or three stages with relaxation times t 1 »40-140 and t 2 »450-800 min, re− spectively. It also follows from the data given in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…During the measurements the samples were kept at liquid N 2 (LN 2 ) temperature. The R H (B) and s(B) dependences were analyzed using discrete mobility spectrum analysis (DMSA), as described elsewhere [4,8,9]. First measurements were performed straight after the milling, with the allowance for the time required for mounting samples on the holders and cooling them down to LN 2 temperature.…”

Section: Methodsmentioning

confidence: 99%

“…As a result of this relaxation pro− cess, the electron concentration n continually decreases (within 10 3 -10 5 min), depending on chemical nature of do− pants and defects, and stabilizes on the certain level N SD that describes the residual donor concentration (both extrinsic N ED and introduced, native dopants N ID ) and formed donor centres D in the sample [4][5][6]. Immediately after IM, elec− tron concentration in converted n−type layer characterizes the total concentration of different defects in the sample.…”

Section: Introductionmentioning

confidence: 99%

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The study of HgCdTe MBE-grown structure with ion milling

Pociask¹

2010

Opto-Electronics Review

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Of many techniques used to characterize quality of HgCdTe, ion milling is emerging as a unique means to reveal electrically active and neutral defects and complexes. Ion milling is capable of strongly affecting electrical properties of HgCdTe, up to conductivity type conversion in p-type material. It appears, that strongly non-equilibrium processes which take place under ion milling, when material is oversaturated with mercury interstitial atoms generated near a surface, lead to formation of specific defect complexes, which may not form under other type of treatment. By measuring parameters of a crystal before and after milling, and following disintegration of defects with time after ion milling (’relaxation’), one can detect and identify these defects. This method was applied to analyse different samples grown by molecular beam epitaxy.

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