Electrical characteristics of textured polysilicon oxide prepared by a low-temperature wafer loading and N/sub 2/ preannealing process

Wu, Shye Lin; Lin, Ta Yow; Lee, Chung Len; Lei, T. F.

doi:10.1109/55.215128

Cited by 15 publications

(2 citation statements)

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“…An asymmetry in the J -E behaviour showing a slightly higher tunnelling current in most of the tunnelling voltage range is observed in the depletion region. This behaviour is different from that of thermal polyoxides which show higher current from the oxide/polysilicon interface [6,14,15]. However, the ECR N 2 O-plasma polyoxide reported in the literature [8] shows almost the same J -E characteristics under both injection conditions.…”

Section: Resultsmentioning

confidence: 70%

“…The properties of the polyoxide films are strongly dependent on the oxide growth condition, microstructure, oxide thickness, doping etc. A conventional thermal oxidation process has been employed for growing these oxides on heavily implanted substrate [5] and on thin texturized polysilicon films [6,7] on silicon substrates. The electron injection efficiency was found to be enhanced in the above studies, respectively, due to a lower electron barrier height (∼1.8 eV) and a localized high field in the texturized Si/SiO 2 interface.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Electrical properties of thin polyoxides grown at a low temperature using microwave oxygen plasma

Saha¹,

Bera²,

Ray³

et al. 1998

Semicond. Sci. Technol.

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Microwave plasma oxidation of polycrystalline silicon has been carried out to grow thin polyoxide films at a low temperature in O 2 ambient. The electrical properties of grown oxides have been studied using a metal-oxide-semiconductor structure. The current-voltage characteristics of polyoxides have been studied for different poly doping and post-oxidation annealing conditions. It is found that the polyoxide on undoped poly-Si has lower leakage current and higher breakdown voltage, whereas the oxide on doped poly-Si has higher tunnelling efficiency at lower field. The oxide on boron doped poly-Si exhibits electron trapping behaviour.

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Section: Resultsmentioning

confidence: 70%

Section: Introductionmentioning

confidence: 99%