Electrical properties of thin polyoxides grown at a low temperature using microwave oxygen plasma

Abstract

Microwave plasma oxidation of polycrystalline silicon has been carried out to grow thin polyoxide films at a low temperature in O 2 ambient. The electrical properties of grown oxides have been studied using a metal-oxide-semiconductor structure. The current-voltage characteristics of polyoxides have been studied for different poly doping and post-oxidation annealing conditions. It is found that the polyoxide on undoped poly-Si has lower leakage current and higher breakdown voltage, whereas the oxide on doped poly-Si has higher tunnelling efficiency at lower field. The oxide on boron doped poly-Si exhibits electron trapping behaviour.