Electrical characteristics of rectifying polycrystalline silicon/silicon carbide heterojunctions

Henning, J.P.; Schoen, K.J.; Melloch, M. R.; Woodall, J. M.; Cooper, James A.

doi:10.1007/s11664-998-0403-x

Cited by 33 publications

(22 citation statements)

References 6 publications

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“…The parameters extracted from the C-V characteristics of the BAPDs are found to be in good agreement with those determined from SIMS measurement. The diffusion voltage was estimated to be 2.9 V from extrapolating the C-V measurements and is consistent with the value calculated using the data of Henning et al [9].…”

Section: A Layer Detailssupporting

confidence: 86%

Nonlocal effects in thin 4H-SiC UV avalanche photodiodes

David

Tozer

et al. 2003

IEEE Trans. Electron Devices

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ReuseUnless indicated otherwise, fulltext items are protected by copyright with all rights reserved. The copyright exception in section 29 of the Copyright, Designs and Patents Act 1988 allows the making of a single copy solely for the purpose of non-commercial research or private study within the limits of fair dealing. The publisher or other rights-holder may allow further reproduction and re-use of this version -refer to the White Rose Research Online record for this item. Where records identify the publisher as the copyright holder, users can verify any specific terms of use on the publisher's website. TakedownIf you consider content in White Rose Research Online to be in breach of UK law, please notify us by emailing eprints@whiterose.ac.uk including the URL of the record and the reason for the withdrawal request. ) for hole (electron) injection, was measured with 365-nm light in both structures. Modeling the experimental results using a simple quantum efficiency model and a nonlocal description yields effective ionization threshold energies of 12 and 8 eV for electrons and holes, respectively, and suggests that the dead space in 4H-SiC is soft. Although dead space is important, pure hole injection is still required to ensure low excess noise in thin 4H-SiC APDs owing to ratios that remain large, even at very high fields.

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Section: A Layer Detailssupporting

confidence: 86%

Nonlocal effects in thin 4H-SiC UV avalanche photodiodes

David

Tozer

et al. 2003

IEEE Trans. Electron Devices

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“…24 Richardson constants for Si and SiC have been reported as 112 A/cm 2 K 2 and 72 A/cm 2 K 2 , respectively. 25,26 A comparison with these results and noting the electrical resistance values in Table I suggests that the interstitial Mo 2 C layer in the device structure as well as the resistivity of the nitrogen-doped diamond layer can limit the value of the Richardson's constant. It should be stated that data that exhibit a higher degree of deviation from the law of Richardson-Dushman could be described by an alternate set of work function and Richardson's constant.…”

Section: Resultsmentioning

confidence: 85%

Substrate-diamond interface considerations for enhanced thermionic electron emission from nitrogen doped diamond films

Koeck

Nemanich

2012

Journal of Applied Physics

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Thermionic electron emission from low work function doped diamond films can be related to materials' properties, which include donor states, surface electron affinity, and substrate-diamond interface properties. The focus of this study is on how the properties of the substrate material affect the emission. Two aspects are considered, the substrate electrical resistance and the substrate Richardson constant, and the effects of tungsten, molybdenum and rhenium substrates are explored. Low work function diamond films were deposited on the substrates, and the thermionic emission was measured to $530 C and described in terms of a fit to the Richardson-Dushman formalism. The results establish that all surfaces exhibit a similar work function but the Richardson constant and maximum emission current vary considerably. The rhenium based emitter displayed a low work function of 1.34 eV, a significant Richardson constant of 53.1 A/cm 2 K 2 , and an emission current density of $44 mA/cm 2 at a temperature of 530 C. The results indicated that interface carbide formation could limit the emission presumably because of increased electrical resistance. For non-carbide forming substrates, an increased substrate Richardson constant corresponded to enhanced emission from the diamond based emitter. V C 2012 American Institute of Physics.

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“…After deposition, anneals have been carried out in 450, 600 and 710 C for 10,10 and 8min, separately, in nitrogen atmosphere. For sample B, the difference from sample is an additional polysilicon interlayer between p-SiC and aluminum, just as shown in Fig.5 [2] have also obtained a structure For the Al/polysilicon potential barrier, it has been drastically decreased for the heavy-doping polysilicon.…”

Section: Preparation Of 3c-sic Epitaxial Layermentioning

confidence: 64%

Polysilicon-Al Based Ohmic Contact on p-Type 3C-SiC Film Grown on Silicon Substrate

Zhao

Jiang

Liu

2006

2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings

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In this paper, a method that combines radio frequency (RF) plasma with hot filament (HF) chemical vapor deposition (CVD) together has been used to prepare 3C-SiC film. The samples obtained through the above method have been systematically demonstrated by atom force microscopy (AFM), x-ray diffraction (XRD).Its concentration is measured to be p=1.33 10 17 cm -3 using Hall effect. The samples have been divided into two parts: ones ohmic contact is made with deposition of aluminum directly on its surface. Alternately, the other's metal contact is deposited following a polysilicon pre-deposition. Both of them are annealed at 450, 600 and 710 C, separately. The specific contact resistance of sample without polysilicon annealed at 710 C is c 0.014 cm 2 and that of sample with polysilicon annealed at the same condition exhibits an improved property. Its specific contact resistance can be lowered to be c 3.5 10 -4 cm 2 . The mechanism for this experimental result has been explained in this paper, too. And attempt to add nanometer grain on polysilicon to lower barrier.

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Electrical characteristics of rectifying polycrystalline silicon/silicon carbide heterojunctions

Cited by 33 publications

References 6 publications

Nonlocal effects in thin 4H-SiC UV avalanche photodiodes

Nonlocal effects in thin 4H-SiC UV avalanche photodiodes

Substrate-diamond interface considerations for enhanced thermionic electron emission from nitrogen doped diamond films

Polysilicon-Al Based Ohmic Contact on p-Type 3C-SiC Film Grown on Silicon Substrate

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