Electrical characteristics of novel SCR - based ESD protection for power clamp

Koo, Yong Seo

doi:10.1587/elex.9.1479

Cited by 2 publications

(1 citation statement)

References 5 publications

(5 reference statements)

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“…The LVTSCR ESD protection structure has improved electrical properties to effectively prevent ESD surge at a low voltage. The proposed LDO regulator has built in an LVTSCR-based ESD protection circuit to secure the high reliability of the IC circuit [18][19][20][21][22][23][24]. The proposed LDO regulator using the current driving buffer structure was secured reliably by applying ESD surge to POWER CLAMP and I/O CLAMP, and then the output voltage was verified.…”

Section: Introductionmentioning

confidence: 99%

Design of Capacitor-Less High Reliability LDO Regulator with LVTSCR Based ESD Protection Circuit Using Current Driving Buffer Structure

Kwon

Koo

2022

Electronics

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The peak voltage depending on the load current can be affected by the external capacitors installed in the output stage of the LDO regulator. However, the capacitor-less LDO regulator proposed in this study was applied a current driving buffer structure between the output stage of the error amplifier and the path transistor. Therefore, the proposed LDO regulator maintained a stable output voltage regardless of the load current by controlling an effective overshoot/undershoot voltage. In addition, the proposed LDO regulator has a built-in LVTSCR based on the ESD protection circuit. As most IC circuits are malfunctioned and destroyed by the ESD phenomenon, the reliability was verified through the built-in ESD protection circuit of the proposed LDO regulator. The proposed LDO regulator with the current driving buffer structure can effectively control the peak voltage. As a result of the measurement, the undershoot voltage of 22 mV and the overshoot voltage of 19 mV were maintained when the load current of 250 mA was provided under the conditions of 3.3 V to 4.5 V and the output power voltage of 3 V. The proposed ESD protection circuit is also guaranteed to function at temperatures as high as 500 K.

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Section: Introductionmentioning

confidence: 99%

Design of Capacitor-Less High Reliability LDO Regulator with LVTSCR Based ESD Protection Circuit Using Current Driving Buffer Structure

Kwon

Koo

2022

Electronics

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Design of ESD protection with SCR-based structures for latch-up immunity

Jung

Lee

Choi

et al. 2013

2013 IEEE International Conference of IEEE Region 10 (TENCON 2013)

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In this paper, we proposed a novel SCR (Silicon Controlled Rectifier)-based ESD (Electrostatic Discharge) protection circuit for I/O and power clamp. HHVSCR (High Holding Voltage SCR) has a high holding voltage and low trigger voltage characteristics than conventional SCR. And advanced HHVSCR is proposed for high voltage application. These characteristics enable to have latch-up immunity under normal operating conditions as well as superior full chip ESD protection. Proposed ESD protection circuits are verified and compared by TCAD simulation. As a result of simulation, holding voltage increases with different design parameters. The holding voltage of HHVSCR changes from 3V to 4.83V. On the other hands, the holding voltage of Advanced HHVSCR changes from 4.61V to 8.75V. The trigger voltage of HHVSCR has about 8~9V whereas Advanced HHVSCR varies from 27.3V to 32.7V due to different breakdown occurrence.

show abstract

Electrical characteristics of novel SCR - based ESD protection for power clamp

Cited by 2 publications

References 5 publications

Design of Capacitor-Less High Reliability LDO Regulator with LVTSCR Based ESD Protection Circuit Using Current Driving Buffer Structure

Design of Capacitor-Less High Reliability LDO Regulator with LVTSCR Based ESD Protection Circuit Using Current Driving Buffer Structure

Design of ESD protection with SCR-based structures for latch-up immunity

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