Electrical Characteristics of Molybdenum Disulfide Flakes Produced by Liquid Exfoliation

Lee, Kangho; Kim, Hye Young; Lotya, Mustafa; Coleman, Jonathan N.; Kim, Gyu Tae; Duesberg, Georg S.

doi:10.1002/adma.201101013

Cited by 232 publications

(176 citation statements)

References 22 publications

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“…As a result, low on/off current ratio (3 ~ 6) as well as p-type gate modulation are often observed in the literature for transistors based on liquid-exfoliated individual MoS2 flakes. [2,36,37] However, previously-demonstrated back-gate TFTs based on films of exfoliated MoS2 nanosheets only exhibit negligible on/off current ratio (< 1.1). [38] Our printed TFTs have comparable on/off current ratio to those based on individual liquid-exfoliated MoS2 flakes, proving the efficiency of the printing technology.…”

Section: Resultsmentioning

confidence: 99%

Inkjet Printing of MoS₂

Naiini

Vaziri

et al. 2014

Adv Funct Materials

214

186

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A simple and efficient inkjet printing technology is developed for molybdenum disulfide (MoS2), one of the most attractive two-dimensional layered materials. The technology effectively addresses critical issues associated with normal MoS2 liquid dispersions (such as incompatible rheology, low concentration, and solvent toxicity) and hence can directly and reliably write uniform patterns of high-quality (5-7 nm thick) MoS2 nanosheets at a resolution of tens of micrometers. The technology efficiency facilitates the integration of printed MoS2 patterns with other components (electrodes), and hence allows fabricating various functional devices, including thin film transistors, photoluminescence patterns, and photodetectors, in a simple, massive and cost-effective manner while retains the unique properties of MoS2. The technology has great potential in a variety of applications, such as photonics, optoelectronics, sensors and energy storage.

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Section: Resultsmentioning

confidence: 99%

Inkjet Printing of MoS₂

Naiini

Vaziri

et al. 2014

Adv Funct Materials

214

186

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“…Solution‐processed exfoliation has been employed for up‐scale production of two‐dimensional graphene and MoS 2 29. Single‐layer fluorinated graphene and fluorographene were obtained by exfoliation from fluorinated graphite assisted by ultrasonication.…”

Section: Methods For Synthesizing Fluorinated Graphenementioning

confidence: 99%

Two‐Dimensional Fluorinated Graphene: Synthesis, Structures, Properties and Applications

et al. 2016

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Fluorinated graphene, an up‐rising member of the graphene family, combines a two‐dimensional layer‐structure, a wide bandgap, and high stability and attracts significant attention because of its unique nanostructure and carbon–fluorine bonds. Here, we give an extensive review of recent progress on synthetic methods and C–F bonding; additionally, we present the optical, electrical and electronic properties of fluorinated graphene and its electrochemical/biological applications. Fluorinated graphene exhibits various types of C–F bonds (covalent, semi‐ionic, and ionic bonds), tunable F/C ratios, and different configurations controlled by synthetic methods including direct fluorination and exfoliation methods. The relationship between the types/amounts of C–F bonds and specific properties, such as opened bandgap, high thermal and chemical stability, dispersibility, semiconducting/insulating nature, magnetic, self‐lubricating and mechanical properties and thermal conductivity, is discussed comprehensively. By optimizing the C–F bonding character and F/C ratios, fluorinated graphene can be utilized for energy conversion and storage devices, bioapplications, electrochemical sensors and amphiphobicity. Based on current progress, we propose potential problems of fluorinated graphene as well as the future challenge on the synthetic methods and C‐F bonding character. This review will provide guidance for controlling C–F bonds, developing fluorine‐related effects and promoting the application of fluorinated graphene.

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“…5 This effect is similar to the underestimation of mobility in other semiconductor systems when Schottky barriers are present. 42 To better understand electrons' transport mechanism in TPdS nanowires, transport measurements at temperatures spanning from 90 K to 300 K were performed. In Figure 4d, we plot the temperature dependence of source-drain current at different fixed gate voltages from +30 V to +80 V and the source-drain bias set to 0.2 V. We notice that, for all gate voltages, the temperature dependence of the current has two distinct behaviors above and below 140 K. This implies that carrier transport in these two regimes is governed by different mechanisms.…”

Section: Abstract: 1d Nanostructure Nanowire Van Der Waals Materialmentioning

confidence: 99%

Direct Fabrication of Functional Ultrathin Single-Crystal Nanowires from Quasi-One-Dimensional van der Waals Crystals

Liu

Antipina

et al. 2016

Nano Lett.

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. (2016) Direct fabrication of functional ultrathin single-crystal nanowires from quasi-one-dimensional van der Waals crystals. Nano Letters. Permanent WRAP URL:http://wrap.warwick.ac.uk/81687 Copyright and reuse:The Warwick Research Archive Portal (WRAP) makes this work by researchers of the University of Warwick available open access under the following conditions. Copyright © and all moral rights to the version of the paper presented here belong to the individual author(s) and/or other copyright owners. To the extent reasonable and practicable the material made available in WRAP has been checked for eligibility before being made available.Copies of full items can be used for personal research or study, educational, or not-for profit purposes without prior permission or charge. Provided that the authors, title and full bibliographic details are credited, a hyperlink and/or URL is given for the original metadata page and the content is not changed in any way. Publisher's statement:"This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work http://pubs.acs.org/page/policy/articlesonrequest/index.html ." A note on versions:The version presented here may differ from the published version or, version of record, if you wish to cite this item you are advised to consult the publisher's version. Please see the 'permanent WRAP URL above for details on accessing the published version and note that access may require a subscription. A functional logic gate consisting of both n-type Ta2Pd3Se8 and p-type Ta2Pt3Se8 field-effect

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Electrical Characteristics of Molybdenum Disulfide Flakes Produced by Liquid Exfoliation

Cited by 232 publications

References 22 publications

Inkjet Printing of MoS₂

Inkjet Printing of MoS₂

Two‐Dimensional Fluorinated Graphene: Synthesis, Structures, Properties and Applications

Direct Fabrication of Functional Ultrathin Single-Crystal Nanowires from Quasi-One-Dimensional van der Waals Crystals

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Electrical Characteristics of Molybdenum Disulfide Flakes Produced by Liquid Exfoliation

Cited by 232 publications

References 22 publications

Inkjet Printing of MoS2

Inkjet Printing of MoS2

Two‐Dimensional Fluorinated Graphene: Synthesis, Structures, Properties and Applications

Direct Fabrication of Functional Ultrathin Single-Crystal Nanowires from Quasi-One-Dimensional van der Waals Crystals

Contact Info

Product

Resources

About

Inkjet Printing of MoS₂

Inkjet Printing of MoS₂