Electrical Characteristics of Metal/Cerium Dioxide/Silicon Structures

Abstract

Electrical characteristics of a Au/CeO2/Si structure have been measured by means of capacitance-voltage (C–V) and conductance-voltage (G–V) methods. Single crystalline and polycrystalline CeO2 films are grown on silicon substrates using electron-beam evaporation. MOS characteristics of the samples are classified by the crystallinity of the CeO2 films rather than by the orientation or conduction type of the Si substrate. Polycrystalline CeO2 film samples show a fine structure around the flat-band voltage in the C–V curves and injection-type hysteresis. It is clarified that the characteristics of the single crystalline CeO2 film sample are free from such undesirable properties caused by negative charge and carrier injection. Dielectric constant ε r of the CeO2 films is estimated to be around 20, which is close to the bulk value (∼26).

Deposition of cerium oxide films on Si (100) and glass substrates using the ESAVD method

“…Cerium dioxide (CeO 2 ) thin film is an attractive material with multiple applications, such as silicon-on-insulator (SOI) structures [1,2], miniatured capacitors [3,4], electrolytes in solid oxide fuel cells (SOFCs) [5,6], and counterelectrode in smart window devices, because of its high optical [7,8] and intermediate buffer layers between high-temperature superconducting materials and different substrates [9][10][11][12]. For SOI application, several other insulating materials have been investigated, such as a-Al 2 O 3 , spinel, CaF 2 , zirconia, or yttrium-stablised zirconia.…”

Laser Ablation Deposition of CeO2−x Epitaxial Domains on Glass

“…In general, the catalytic activity of oxides is derived through their provision of adsorbed surface oxygen species for reactions, and/or easy extraction of their lattice oxygen to form oxygen vacancies in the oxide structure. CeO "lm also "ts silicon-on-insulator structures, stable capacitors for ultralarge-scale integration (ULSI) and bu!er layers of superconducting materials because of its chemical stability, high dielectric constant ( &26) and high-quality epitaxy on silicon (3).…”

Preparation and microstructural characterization of Si(100) Ce1−x GdxO2−δ thin films prepared by pulsed laser deposition technique

“…High refractive index, absorption of UV radiation, transparency in the visible and near-IR region, make cerium oxide thin films an ideal UV blocker and excellent substitute for titanium oxide and zinc oxide in sunscreens [1][2][3][4][5]. Cerium oxide plays an important role in electrochromic devices [6] as a substrate for high temperature superconductors [7], silicon-oninsulator (SOI) structures [8,9], miniaturized capacitors [10,11], counter electrode in smart windows due to its high transparency [12,13]. Various techniques have been employed to prepare cerium oxide and gadolinium doped cerium oxide thin films, such as sol-gel method [14], sputtering [15], electron beam evaporation [16], metal organic chemical vapor deposition [17], atomic layer * E-mail: nagarajuphysics@gmail.com deposition [18], spray pyrolysis [19] and pulsed laser deposition (PLD) [20][21][22][23].…”