Electrical characteristics of magnesium-doped gallium nitride junction diodes

Abstract

Fabrication of magnesium-doped gallium nitride nanorods and microphotoluminescence characteristicsKinetics of low-temperature activation of acceptors in magnesium-doped gallium nitride epilayers grown by metal-organic vapor-phase epitaxy Electrical characteristics of lateral p ϩ n diodes made from gallium nitride epitaxial layers on sapphire substrates are reported. The current-voltage characteristics are observed to have several distinct regions in which a tunneling current has been identified at low forward bias in addition to the conventional temperature-dependent diffusion current observed at moderate forward bias. A tunneling behavior indicates the presence of deep-level traps at the junction, which alter the electrical behavior of these junctions compared to the conventional behavior. In addition, space-charge-limited currents are found to influence these junctions at large forward and reverse bias.

Low temperature preparation p-CuI/n-ZnO wide gap heterojunction diode

“…6, we presented the dark current as a function of junction-voltage in forward bias. At low forward voltage (V < 1.6 eV) (region I), the current increased exponentially as the relation of I ∼ exp(˛V), which usually observed in wide band gap p-n diodes [25][26][27], and attributed to the recombination-tunneling mechanism. The constant ␣ has been evaluated to be 5.8 V −1 by fitting the experimental data in Fig.…”

Changes in electrical characteristics associated with degradation of InGaN blue light-emitting diodes

“…This behavior constitutes a typical soft breakdown characteristic, which is believed to be related to the threading dislocations in the undoped thin InGaN active layers. recently reported by Fedison et al 11 Because of the power-law dependence, these authors believed that the reverse I-V characteristics were due to spacecharge-limited (SCL) currents. One possible problem with this interpretation is that bulk SCL currents are mainly observed in insulators or high-resistivity materials, and typical I-V characteristics follow Ohm's law at low voltages, then show a steep current rise, then exhibit the SCL current at high voltages.…”

Effects of mid-gap defects and barrier interface reactions on tunneling behaviors of ZnO-i-Si heterojunctions

“…Larger α means higher carrier injection due to the presence of donor-like defects states in the i-layer that provide pathways for recombination tunnelling. 2,37 Region III, from 2 V to 5 V , follows I ∝(V−V 0 ) 2 that is characteristic of space-charge-limited current (SCLC) transport. 2,37 As the annealing temperature goes beyond 850 o C, this region would disappears for samples C4 and C5.…”

“…2,37 Region III, from 2 V to 5 V , follows I ∝(V−V 0 ) 2 that is characteristic of space-charge-limited current (SCLC) transport. 2,37 As the annealing temperature goes beyond 850 o C, this region would disappears for samples C4 and C5. The lack of SCLC is proven here to be a result of the ZnAl 2 O 4 phase formation.…”