Electrical Characteristics of Al/Poly(methyl methacrylate)/p-Si Schottky Device

Selçuk, A. Birkan; Ocak, Sema Bi̇lge; Aras, Fikret. G.; Orhan, Elif

doi:10.1007/s11664-014-3267-2

Cited by 15 publications

(21 citation statements)

References 36 publications

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“…Relevant research has sought to improve OTFT performance in organic and polymeric semiconductors by modifying their chemical structures [9–12]. Other approaches, such as controlling the deposition of crystalline organic films [13–15] and controlling the nature of the interfaces, have also been developed [16, 17]. …”

Section: Introductionmentioning

confidence: 99%

Organic/Inorganic Nano-hybrids with High Dielectric Constant for Organic Thin Film Transistor Applications

Jiang

Lee

2016

Nanoscale Res Lett

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The organic material soluble polyimide (PI) and organic–inorganic hybrid PI–barium titanate (BaTiO3) nanoparticle dielectric materials (IBX, where X is the concentration of BaTiO3 nanoparticles in a PI matrix) were successfully synthesized through a sol–gel process. The effects of various BaTiO3 contents on the hybrid film performance and performance optimization were investigated. Furthermore, pentacene-based organic thin film transistors (OTFTs) with PI-BaTiO3/polymethylmethacrylate or cyclic olefin copolymer (COC)-modified gate dielectrics were fabricated and examined. The hybrid materials showed effective dispersion of BaTiO3 nanoparticles in the PI matrix and favorable thermal properties. X-ray diffraction patterns revealed that the BaTiO3 nanoparticles had a perovskite structure. The hybrid films exhibited high formability and planarity. The IBX hybrid dielectric films exhibited tunable insulating properties such as the dielectric constant value and capacitance in ranges of 4.0–8.6 and 9.2–17.5 nF cm−2, respectively. Adding the modified layer caused the decrease of dielectric constant values and capacitances. The modified dielectric layer without cross-linking displayed a hydrophobic surface. The electrical characteristics of the pentacene-based OTFTs were enhanced after the surface modification. The optimal condition for the dielectric layer was 10 wt% hybrid film with the COC-modified layer; moreover, the device exhibited a threshold voltage of 0.12 V, field-effect mobility of 4.32 × 10−1 cm2 V−1 s−1, and on/off current of 8.4 × 107.

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Section: Introductionmentioning

confidence: 99%

Organic/Inorganic Nano-hybrids with High Dielectric Constant for Organic Thin Film Transistor Applications

Jiang

Lee

2016

Nanoscale Res Lett

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“…Several studies report on homo-and heterojunction diodes as well as on metal-insulator-semiconductor (MIS) structures having large diode ideality factor, ranging from n¼ 2 to n E2.2, n¼ 3, n ¼4-6.9, n ¼ 3.91 70.11, n ¼5.4770.69, n o5.5, n ¼11.5 [22][23][24][25][26]. Ideality factor of our structures is smaller than ideality factors indicated above references.…”

Section: Resultsmentioning

confidence: 99%

Electrical analysis of Al/ZnO/p-Si, Al/PMMA/p-Si and Al/PMMA/ZnO/p-Si structures: Comparison study

Ocak

Selçuk

Aras

et al. 2015

Materials Science in Semiconductor Processing

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“…Chemical cleaning procedures described previously in detail were applied to the wafer [19,20]. Then it was put inside a vacuum chamber to form a good ohmic contact with a thickness of 1240 Å on unpolished surface using Al (99.999 %).…”

Section: Methodsmentioning

confidence: 99%

“…Imaginary and real parts of dielectric loss and loss tangent are strongly affected by metal or polymers coated on the structures [16][17][18][19]. It is known that PMMA has chemical sensing capability, good insulation properties, high rigidity, transparency, dielectric constant and capability of collection of negative charges.…”

Section: Introductionmentioning

confidence: 99%

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Investigation of dielectric properties of heterostructures based on ZnO structures

Selçuk

Orhan

Ocak

et al. 2017

Materials Science-Poland

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The voltage and frequency dependence of dielectric constant , dielectric loss , electrical modulus M , M , loss tangent tanδ and AC electrical conductivity σ AC of p-Si/ZnO/PMMA/Al, p-Si/ZnO/Al and p-Si/PMMA/Al structures have been investigated by means of experimental G-V and C-V measurements at 30 kHz, 100 kHz, 500 kHz and 1 MHz in this work. While the values of , , tanδ and σ AC decreased, the values of M and M increased for these structures when frequency was increased and those of p-Si/ZnO/Al and p-Si/PMMA/Al were comparable with those of p-Si/ZnO/PMMA/Al. The obtained results showed that the values of p-Si/ZnO/PMMA/Al structure were lower than the values of p

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Electrical Characteristics of Al/Poly(methyl methacrylate)/p-Si Schottky Device

Cited by 15 publications

References 36 publications

Organic/Inorganic Nano-hybrids with High Dielectric Constant for Organic Thin Film Transistor Applications

Organic/Inorganic Nano-hybrids with High Dielectric Constant for Organic Thin Film Transistor Applications

Electrical analysis of Al/ZnO/p-Si, Al/PMMA/p-Si and Al/PMMA/ZnO/p-Si structures: Comparison study

Investigation of dielectric properties of heterostructures based on ZnO structures

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