Electrical characteristics due to differences in crystal damage induced by various implant conditions

Fuse, G.; Sano, Masatoshi; Murooka, Hiroki; Yagita, T.; Kabasawa, M.; Siraishi, T.; Fujino, Y.; Suetsugu, Noriyuki; Kariya, Hiroyuki; Izutani, H.; Sugitani, M.

doi:10.1016/j.nimb.2005.04.081

Cited by 13 publications

(7 citation statements)

References 2 publications

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“…Next, the mass effect will be discussed. Table 1 shows the amorphous layer thickness by As dimer implantation, compared with that by as monomer implantation [ 22 ]. The energy for the As dimer is set to be twice larger than that for the monomer, and the dose is set to be half of that for the monomer to keep the equivalence.…”

Section: Damagementioning

confidence: 99%

“…The amorphous thicknesses for the dimer are larger than those for the monomer, as shown in Table 1 . Another fact is that BF 2 + implantation with 1 × 10 15 cm −2 dose usually generates amorphous layer, while the 1 × 10 15 cm −2 B + implantation, accompanied by the 2 × 10 15 cm −2 F + implantation, dose not generate any amorphous layer [ 22 ]. Both results imply that larger ion mass causes larger damage.…”

Section: Damagementioning

confidence: 99%

“… Therma wave (TW) value comparison between the single-wafer type and the batch type implanters [ 22 ]. Single-wafer type: MC3 (SMIT); batch type: GSD-HE (SMIT).…”

Section: Figurementioning

confidence: 99%

See 2 more Smart Citations

A Review of Ion Implantation Technology for Image Sensors †

Teranishi

Fuse

Sugitani

2018

Sensors

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Ion implantation technology is reviewed mainly from the viewpoint of image sensors, which play a significant role in implantation technology development. Image sensors are so sensitive to metal contamination that they can detect even one metal atom per pixel. To reduce the metal contamination, the plasma shower using RF (radio frequency) plasma generation is a representative example. The electrostatic angular energy filter after the mass analyzing magnet is a highly effective method to remove energetic metal contamination. The protection layer on the silicon is needed to protect the silicon wafer against the physisorbed metals. The thickness of the protection layer should be determined by considering the knock-on depth. The damage by ion implantation also causes blemishes. It becomes larger in the following conditions if the other conditions are the same; a. higher energy; b. larger dose; c. smaller beam size (higher beam current density); d. longer ion beam irradiation time; e. larger ion mass. To reduce channeling, the most effective method is to choose proper tilt and twist angles. For P+ pinning layer formation, the low-energy B+ implantation method might have less metal contamination and damage, compared with the BF2+ method.

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Section: Damagementioning

confidence: 99%

Section: Damagementioning

confidence: 99%

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A Review of Ion Implantation Technology for Image Sensors †

Teranishi

Fuse

Sugitani

2018

Sensors

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“…That is a damage creation issue. 10 Generally, the higher beam current creates the higher damage and changes sheet resistance after anneal. The phenomena are considered to come from two physical aspects.…”

Section: Cross (Metal) Contaminationmentioning

confidence: 99%

Ion implantation technology and ion sources

Sugitani

2014

Review of Scientific Instruments

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Ion implantation (I/I) technology has been developed with a great economic success of industries of VLSI (Very Large-Scale Integrated circuit) devices. Due to its large flexibility and good controllability, the I/I technology has been assuming various challenging requirements of VLSI evolutions, especially in advanced evolutional characteristics of CMOSFET. Here, reviewing the demands of VLSI manufacturing to the I/I technology, required characteristics of ion implanters, and their ion sources are discussed.

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“…This damage is most evident with single wafer implanters and less of an issue for batch systems [2].…”

Section: Introductionmentioning

confidence: 99%

SEN Ultra-High Energy Implanter (UHE) Developed for Next Generation Image Sensors

Suetsugu

Tsukihara²,

Fuse

et al. 2011

AIP Conference Proceedings

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The UHE is an ultra-high energy implanter developed by SEN Corporation. It was derived from the NV-GSD-HE3 by adding six RF resonators to the beam line. This extends performance so that singly charged boron ions can reach 2 MeV with beam current of 0.75 mA. The maximum energy for triple charged boron is 5 MeV with beam current of 1pA. For phosphorus ions, the UHE can accelerate doubly charged ions up to 4.4 MeV with beam current of 0.35 mA and quadruply charged ions up to 8 MeV with beam current of 1 pA. The primary application of the UHE is the image sensor market where it is used to increase the depth of CCD photodiodes into the surface of the wafer and thereby permit higher pixel density for image sensors. The second purpose is to improve productivity for relatively high boron doses at energies around 3 MeV. In order to address certain CCD defects, the system includes a state-of-the-art beam profile controller which allows optimization of implant damage and micro-uniformity. The ULE is currently used in production of high-end CCD's.

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Electrical characteristics due to differences in crystal damage induced by various implant conditions

Cited by 13 publications

References 2 publications

A Review of Ion Implantation Technology for Image Sensors †

A Review of Ion Implantation Technology for Image Sensors †

Ion implantation technology and ion sources

SEN Ultra-High Energy Implanter (UHE) Developed for Next Generation Image Sensors

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