Ion implantation technology and ion sources

Sugitani, M.

doi:10.1063/1.4854155

Cited by 10 publications

(6 citation statements)

References 1 publication

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“…First, the increase of the total ion beam current without losses in its quality is feasible when the ion source with extra emission ability is used as an injector for modern accelerators. Second, the effective formation of a low energy ion beam is required for ion implantation [2]. Third, the use of the new approach can be especially beneficial for the formation of focused ion beams (FIBs), since it allows one to significantly exceed the limitations on the current density associated with the Child-Langmuir law in the planar case.…”

Section: Introductionmentioning

confidence: 99%

“…On the other hand, the use of a new geometry allows for significant decrease of the extraction voltage and hence it is useful for low energy ion beam production. Such beams are required for ion implantation [11]. The decrease of the optimal extraction voltage can also significantly reduce the co-extracted electron flow in negative ion sources [12].…”

Section: Introductionmentioning

confidence: 99%

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High current ion beam formation with strongly inhomogeneous electrostatic field

Vybin¹,

Izotov²,

Skalyga³

2020

Plasma Sources Sci. Technol.

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We report on a successful test of a new method for intense ion beam formation using an extraction with inhomogeneous electric field. Its key feature is a special shape of the extraction electrodes providing a higher rate of ion acceleration. It is applicable to any ion source type and could be used to improve performance of a wide range of plasma devices. The proof of concept was carried out using a high-current electron-cyclotron resonance ion source SMIS 37. High efficiency of the new extraction and proton beam formation with a record current density of up to 1.1 A cm −2 was demonstrated.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

High current ion beam formation with strongly inhomogeneous electrostatic field

Vybin¹,

Izotov²,

Skalyga³

2020

Plasma Sources Sci. Technol.

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“…These spectral characteristics were retained till the maximum available dose (D = 1 × 10 13 ions/cm 2 ). A logical justification for these spectral improvements in the creation of new states of luminescence and associated transitions was that the Cu + related defect complexes were emanating them [37]. Moreover, the decrease in the absorbance intensity due to the higher dose of Cu ions might have been due to the dissipation of energy which increased the possibility of defects and the consequences of polymer structure degradation.…”

Section: Photoluminescence and Uv-vis Analysismentioning

confidence: 99%

Effect of Cu Ions Implantation on Structural, Electronic, Optical and Dielectric Properties of Polymethyl Methacrylate (PMMA)

et al. 2021

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In this work, the effect of ion bombardment on the optical properties of Polymethylmethacrylate (PMMA) was studied. Polymer samples were implanted with 500 keV Cu+ ions with a fluence ranging from 1 × 1012 to 1 × 1014 ions/cm2. X-ray Diffractometer (XRD) study indicated a relatively lower variation with a higher dose of ions. Fourier Transform Infrared (FTIR) spectra exhibited that with the implantation of Cu ions the intensity of existing bands decreases, while the result confirms the existence of a C=C group. The pristine and ion-implanted samples were also investigated using photoluminescence (PL) and Ultra Violet-Visible (UV-VIS) spectra. The optical band gap (Eg) was observed up to 3.05 eV for the implanted samples, while the pristine sample exhibited a wide energy-gap up to ~3.9 eV. The change in the optical gap indicated the presence of a gradual phase transition for the polymer blends. The dielectric measurements of the pristine and Cu-implanted PMMA were investigated in the 10 Hz to 2 GHz frequency range. It was found that the implanted samples showed a significant decrease in the value of the dielectric constant. The value of the dielectric constant and dielectric loss of the PMMA and Cu-implanted samples at a 1-kHz frequency were found to be ~300 and 29, respectively. The modification of the PMMA energy bandgap in the current research suggested the potential use of Cu implanted PMMA in the field of optical communications and flexible electronic devices.

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“…6) Neutralization is required for not only ion and Hall thrusters but also a low-energy ion implantation along with shrinkage of transistors to cancel out the space charge effect for shallow depths of implants. 7) Most electron sources are generated by plasma discharges, and a microelectron source, a neutralizer which we report here, also employs a plasma discharge sustained by electron cyclotron resonance (ECR).…”

Section: Introductionmentioning

confidence: 99%

Electron extraction mechanisms of a micro-ECR neutralizer

Takao

Hiramoto

Nakagawa

et al. 2016

Jpn. J. Appl. Phys.

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13Three-dimensional particle simulations have been conducted to analyze the mechanisms of 14 electron extraction through the orifices of a 4.2 GHz microwave discharge microneutralizer, 15 using a xenon electron cyclotron resonance plasma. The dimensions of the neutralizer are 16 20×20×4 mm 3 , and a ring-shaped microwave antenna and permanent magnets are employed for 17 its discharges. The numerical model is composed of a particle-in-cell simulation with a Monte 18 Carlo collision algorithm for charged particle motions, a finite-difference time-domain method 19 for microwaves, and a finite element analysis for magnetostatic fields. The simulation results 20 microspacecraft, HODOYOSHI-4. 8) The microspacecraft was launched on June 19, 2014 and 36 the MIPS was operated successfully in space on October 28, 2014 for the first time in the world. 37The neutralizer of the MIPS is based on a low-power microwave neutralizer for the 150-mA-38 class ion beam exhausted from an ion thruster, [9][10][11] and employs the same frequency of 4.2 GHz 39 and ring-shaped permanent magnets, but a different type of microwave antenna is used because 40 of the small size of the MIPS neutralizer. 12) 41Although the MIPS has already been operated in space, the mechanism of electron 42 extraction from its neutralizer is still unclear and needs to be elucidated for a better performance. 43Owing to its small size, the neutralizer operates using an identical discharge chamber, the same 44 4 microwave power, and a half gas flow rate compared with the ion source, which indicates that 45 the MIPS neutralizer consumes resources (space, power, and propellant) more significantly than 46 conventional ion propulsion systems. One of the reasons for its poor performance is considered 47 24) and elastic scattering and charge exchange for ions, 25) where the null-collision method is 79 employed to reduce the calculation time. 26) The motion of excited-state atoms and Coulomb 80 collisions are not taken into account. Neutral particles are assumed to be spatially uniform 81 throughout the simulation and have a Maxwellian velocity distribution at a gas temperature of 82 300 K. (ii) The magnetic fields of microwaves are neglected compared with the magnetostatic 83 fields of the permanent magnets. (iii) The effect of plasma current is not taken into account 84 127The macroscopic parameters, such as electron density and electron temperature, were 128 determined by averaging over 50000 microwave cycles (11.9 µs) after the steady state was 129 reached. The peak plasma density is located in the ECR layer on the right side of the antenna, 130where the maximum electron density is 1.6×10 17 m −3 , and their distributions spread along the 131 magnetic field lines, producing the ring-shaped profile of plasma density. Such a distribution 132 was also confirmed in the experiment. This result indicates that the plasma is well confined 133 because of the mirror magnetic fields. The distributions of electron temperature and plasma 134 potential are almost the same as the d...

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Ion implantation technology and ion sources

Cited by 10 publications

References 1 publication

High current ion beam formation with strongly inhomogeneous electrostatic field

High current ion beam formation with strongly inhomogeneous electrostatic field

Effect of Cu Ions Implantation on Structural, Electronic, Optical and Dielectric Properties of Polymethyl Methacrylate (PMMA)

Electron extraction mechanisms of a micro-ECR neutralizer

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