Electrical anisotropy of the chain-like conductors NbSe3 and TaSe3

Geserich, H. P.; Scheiber, G.; Lévy, F.; Monçeau, P.

doi:10.1016/0378-4363(86)90085-9

Cited by 11 publications

(20 citation statements)

References 4 publications

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“…Bulk TaSe 3 has not been studied in as much detail as other TMT materials, possibly due to its low superconducting phase transition T c ≈ 2 K. [ 15,48 ] A variety of measurements indicate that TaSe 3 is metallic or semimetallic down to T c . [ 49–52 ] At the same time, some reports suggested that stress or strain can produce a semiconducting gap. [ 35,53 ] Moreover, many published studies on TaSe 3 do not include detailed compositional data (e.g., EDS, electron microprobe analysis, or inductively coupled plasma–mass spectrometry).…”

Section: Figurementioning

confidence: 99%

“…Bulk TaSe3 has not been studied in as much detail as other TMT materials, possibly due to its low superconducting phase transition Tc ~2 K [15,43] . A variety of measurements indicate that TaSe3 is metallic or semi-metallic down to Tc, [44][45][46][47] . At the same time, some reports suggested…”

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confidence: 99%

“…[34,50,51] Stoichiometric TaSe3 has been isolated from high pressure conditions and selenium-flux growth. [33,52] Although selenium deficiency does not seem to affect the overall electrical conductivity of TaSe3 or its Tc, [15,37,43,[45][46][47] several studies indicate that doping can modify its electronic structure. For example, the mixed chalcogenide Ta(SxSe1-x)3 becomes semiconducting with increasing sulfur content, [53] and indium impurities from contacts to TaSe3 can produce a metal-insulator transition.…”

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confidence: 99%

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Electrically Insulating Flexible Films with Quasi‐1D van der Waals Fillers as Efficient Electromagnetic Shields in the GHz and Sub‐THz Frequency Bands

et al. 2021

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Polymer composite films containing fillers comprising quasi‐1D van der Waals materials, specifically transition metal trichalcogenides with 1D structural motifs that enable their exfoliation into bundles of atomic threads, are reported. These nanostructures are characterized by extremely large aspect ratios of up to ≈106. The polymer composites with low loadings of quasi‐1D TaSe3 fillers (<3 vol%) reveal excellent electromagnetic interference shielding in the X‐band GHz and extremely high frequency sub‐THz frequency ranges, while remaining DC electrically insulating. The unique electromagnetic shielding characteristics of these films are attributed to effective coupling of the electromagnetic waves to the high‐aspect‐ratio electrically conductive TaSe3 atomic‐thread bundles even when the filler concentration is below the electrical percolation threshold. These novel films are promising for high‐frequency communication technologies, which require electromagnetic shielding films that are flexible, lightweight, corrosion resistant, inexpensive, and electrically insulating.

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Section: Figurementioning

confidence: 99%

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Electrically Insulating Flexible Films with Quasi‐1D van der Waals Fillers as Efficient Electromagnetic Shields in the GHz and Sub‐THz Frequency Bands

et al. 2021

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“…Using spatially and temporally resolved measurements, the authors also estimate an exciton diffusion coefficient of 1.2 cm 2 /s, a diffusion length of 130 nm, and an exciton mobility of 50 cm 2 /Vs. 176 Recently, the anisotropic electrical and optical properties of few-layer TiS3 flakes have been investigated. 27 Figure 11(a) shows an atomic force microscopy (AFM) image of a representative device from the study.…”

Section: Optoelectronic Properties and Devicesmentioning

confidence: 99%

Electronics and optoelectronics of quasi-1D layered transition metal trichalcogenides

et al. 2017

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The isolation of graphene and transition metal dichalcongenides has opened a veritable world to a great number of layered materials which can be exfoliated, manipulated, and stacked or combined at will. With continued explorations expanding to include other layered materials with unique attributes, it is becoming clear that no one material will fill all the post-silicon era requirements. Here we review the properties and applications of layered, quasi-one dimensional transition metal trichalcogenides (TMTCs) as novel materials for next generation electronics and optoelectronics. The TMTCs present a unique chain-like structure which gives the materials their quasi-one dimensional properties such as high anisotropy ratios in conductivity and linear dichroism. The range of band gaps spanned by this class of materials (0.2 eV-2 eV) makes them suitable for a wide variety of applications including field-effect transistors, infrared, visible and ultraviolet photodetectors, and unique applications related to their anisotropic properties which opens another degree of freedom in the development of next generation electronics. In this review we survey the historical development of these remarkable materials with an emphasis on the recent activity generated by the isolation and characterization of atomically thin titanium trisulfide (TiS3).

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“…In such metals, electrons and holes near the Fermi level often couple strongly with a lattice vibration, thereby resulting in a periodic spatial modulation of charge-a charge density wave (CDW) and an electron band gap at the Fermi level-the CDW gap [3]. So far, only a very limited number of material systems, such as organic conductors [6], Pt chain compounds [7], transition metal trichalcogenides [8], and transition metal bronzes [9] have been shown to exhibit the Peierls instability, which are all based on 3D materials with strong anisotropy in their electronic band structures.…”

Section: Instability and Charge Density Wave Of Metallic Quantum Chaimentioning

confidence: 99%

Instability and Charge Density Wave of Metallic Quantum Chains on a Silicon Surface

et al. 1999

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Self-assembled indium linear chains on the Si(111) surface are found to exhibit instability of the metallic phase and 1D charge density wave (CDW). The room-temperature metallic phase of these chains undergoes a temperature-induced, reversible transition into a semiconducting phase. The 1D CDW along the chains is observed directly in real space by scanning tunneling microscopy at low temperature. The Fermi contours of the metallic phase measured by angle-resolved photoemission exhibit a perfect nesting predicting precisely the CDW periodicity. [S0031-9007(99)09330-8]

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Electrical anisotropy of the chain-like conductors NbSe3 and TaSe3

Cited by 11 publications

References 4 publications

Electrically Insulating Flexible Films with Quasi‐1D van der Waals Fillers as Efficient Electromagnetic Shields in the GHz and Sub‐THz Frequency Bands

Electrically Insulating Flexible Films with Quasi‐1D van der Waals Fillers as Efficient Electromagnetic Shields in the GHz and Sub‐THz Frequency Bands

Electronics and optoelectronics of quasi-1D layered transition metal trichalcogenides

Instability and Charge Density Wave of Metallic Quantum Chains on a Silicon Surface

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