Electrical and thermoelectrical properties of Bi2Se3 grown by metal organic chemical vapour deposition technique

Bayaz, A. Al; Giani, Alain; Foucaran, A.; Pascal‐Delannoy, F.; Boyer, Alexandre

doi:10.1016/s0040-6090(03)00675-8

Cited by 64 publications

(46 citation statements)

References 19 publications

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“…[ [45][46][47] In Figure 3a, we observe that the photovoltage also appears when the laser shines on various locations on the bare Bi2Se3 film away from the electrode. The contribution from the bare film is about ten times weaker than the maximum photovoltage signal from the metal/Bi2Se3 overlapping area.…”

Section: Resultsmentioning

confidence: 99%

Helicity‐Dependent Photovoltaic Effect in Bi₂Se₃ Under Normal Incident Light

Besbas

Banerjee

Son

et al. 2016

Advanced Optical Materials

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Topological insulators (TIs) form a new class of materials with insulating bulk and surface conduction ensured by topologically protected surface states (TPSS). We investigate the impact of the helicity of a normally incident laser beam on the photovoltaic effect in the TI Bi2Se3. The observation of a helicity dependent photovoltaic effect for normally incident light indicates the presence of out-of-plane spin components for some TPSSs due to the hexagonal warping. In addition, fluctuations in the electrostatic potential at the surface locally break the rotational symmetry of the film allowing the helicity dependent photovoltaic effect. Our result suggests that engineering local electrostatic potentials in Bi2Se3 would allow the control of optically generated spin currents, which may be useful for applications in spin-optoelectronics.

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Section: Resultsmentioning

confidence: 99%

Helicity‐Dependent Photovoltaic Effect in Bi₂Se₃ Under Normal Incident Light

Besbas

Banerjee

Son

et al. 2016

Advanced Optical Materials

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“…Bismuth Selenide (Bi 2 Se 3 ) is one of A 2 V B 3 VI (A = Sb, Bi; B = Se, Te) semiconductor materials, and has attracted much attention due to their potential applications in optoelectronic devices, television cameras, IR spectroscopy [6][7][8][9], optical recording system [10], strain gauges [11], narrow band-gap semiconductors [12], and electromechanical and thermo electrical devices [9,[13][14][15]. Bi 2 Se 3 was usually synthesized by the methods such as metallurgical melt processing [16], travelling heater method [17], Bridgman method [18] at high temperature ([500°C) and solvothermal method in ethylenediamine [19].…”

Section: Introductionmentioning

confidence: 99%

Bismuth selenide nanoparticles: simple synthesis, characterization, and its light harvesting applications in the presence of novel precursor

Ramezani

Sobhani‐Nasab

Davoodi

2015

J Mater Sci: Mater Electron

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Bismuth selenide, Bi 2 Se 3 , nanoparticles were synthesized by a new precursor complex, [bis(salicylate)bismuth(II)]; [Bi 2 (Hsal) 3 ], via a sonochemical method in an aqueous solution. The average diameter of the Bi 2 Se 3 nanoparticles was 25 nm. The efficiency of the Bi 2 Se 3 nanoparticles as a photocatalyst for the decolorization of rhodamine-B and methylene blue using ultraviolet light irradiation has been evaluated. Furthermore, a preliminary study on the possibility of developing a solar cell having the FTO/TiO 2 /Bi 2 Se 3 /Pt-FTO structure was also investigated to produce an inexpensive solar cell by Bi 2 Se 3 nanoparticles. Products were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, photoluminescence, and EDX analysis.

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“…Their experimental bandgaps, between approximately 100 and 300 meV [5-9, 29, 41, 42], make them good candidates for experimental studies of topological effects and for room-temperature spintronics applications. In addition, these materials and some of their alloys are nowadays commonly used in thermoelectric refrigeration and power generation [5,43]. Among the first calculations for these materials, Kioupakis et al [24] examined the position of the valence-band maximum (VBM) and the conduction-band minimum (CBM) of Bi 2 Te 3 , and found improves the LDA effective masses when compared to experimental results.…”

Section: Introductionmentioning

confidence: 99%

Many‐Body Effects in the Electronic Structure of Topological Insulators

Aguilera

Nechaev

Friedrich

et al. 2015

Topological Insulators

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IntroductionMost of the calculations present in the literature for topological insulators (TIs) are based on model Hamiltonians or parameter-dependent tight-binding descriptions [1][2][3][4], and density functional theory (DFT) employing either the local density approximations (LDA) or generalized gradient approximations (GGA) [5][6][7][8][9][10][11][12][13]. Because of their efficiency, the LDA and GGA functionals have allowed for the study of surface and edge states of these materials [14][15][16][17][18][19], and they have shown mostly good agreement with the experimental results. However, LDA and GGA are approximations to the ground-state energy and cannot in principle be expected to yield accurate excited-state properties. More specifically, one often takes the single-particle states that solve the Kohn-Sham (KS) equation of DFT as approximate excitations energies. But these states, strictly speaking, are merely mathematical tools that cannot be endowed with a physical meaning. In particular, they suffer from a strong self-interaction error and lack many-body renormalization effects. Related to that, the DFT bandgap of insulators and semiconductors, though in fact being a ground-state property, is systematically underestimated [20][21][22]. TIs are not an exception: because of their inverted bandgaps, the DFT underestimation of the bandgaps has not only quantitative but also qualitative consequences, and it can even lead to the wrong prediction of some trivial insulators as TIs [23]. Recently, to overcome this problem, calculations [23-33] based on the approximation [34] for the self-energy have started to emerge in the theoretical study of TIs and have shown that not only a much better agreement of the bandgap (in nature and magnitude) but also an improvement in the effective masses and spin-orbit splittings is found when compared to experimental results.In TIs, a strong spin-orbit coupling (SOC) causes the top valence and the bottom conduction band to invert in the bandgap region. The bands hybridize so that an energy gap forms that is of the order of the spin-orbit strength (up to a few hundreds of millielectronvolts). Such small bandgaps require a reliable description of the electronic structure. The inverted band structure is often -but not always, Topological Insulators: Fundamentals and Perspectives, First Edition. Edited

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Electrical and thermoelectrical properties of Bi2Se3 grown by metal organic chemical vapour deposition technique

Cited by 64 publications

References 19 publications

Helicity‐Dependent Photovoltaic Effect in Bi₂Se₃ Under Normal Incident Light

Helicity‐Dependent Photovoltaic Effect in Bi₂Se₃ Under Normal Incident Light

Bismuth selenide nanoparticles: simple synthesis, characterization, and its light harvesting applications in the presence of novel precursor

Many‐Body Effects in the Electronic Structure of Topological Insulators

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Electrical and thermoelectrical properties of Bi2Se3 grown by metal organic chemical vapour deposition technique

Cited by 64 publications

References 19 publications

Helicity‐Dependent Photovoltaic Effect in Bi2Se3 Under Normal Incident Light

Helicity‐Dependent Photovoltaic Effect in Bi2Se3 Under Normal Incident Light

Bismuth selenide nanoparticles: simple synthesis, characterization, and its light harvesting applications in the presence of novel precursor

Many‐Body Effects in the Electronic Structure of Topological Insulators

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Product

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Helicity‐Dependent Photovoltaic Effect in Bi₂Se₃ Under Normal Incident Light

Helicity‐Dependent Photovoltaic Effect in Bi₂Se₃ Under Normal Incident Light