2016
DOI: 10.1021/acs.nanolett.5b04957
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Electrical and Thermoelectric Transport by Variable Range Hopping in Thin Black Phosphorus Devices

Abstract: The moderate band gap of black phosphorus (BP) in the range of 0.3-2 eV, along a high mobility of a few hundred cm(2) V(-1) s(-1) provides a bridge between the gapless graphene and relatively low-mobility transition metal dichalcogenides. Here, we study the mechanism of electrical and thermoelectric transport in 10-30 nm thick BP devices by measurements of electrical conductance and thermopower (S) with various temperatures (T) and gate-electric fields. The T dependences of S and the sheet conductance (σ□) of … Show more

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Cited by 68 publications
(77 citation statements)
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References 47 publications
(67 reference statements)
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“…[105][106][107][108][109][110][111][112][113] Ah igher ZT value at ag iven temperature requires as uitable combination of high electrical conductivity and al ow thermal conductivity.AZT value of about 1i sc rucial for good thermoelectric materials to compete with conventional power generators.I nterestingly,t he electrical and thermal conductance of BP is not only anisotropic but exhibit orthogonally preferred conducting directions. TE materials undergo ad irect solid-state interconversion of thermal to electric energy.T he TE performance and efficiency are characterized by the dimensionless TE figure of merit ZT.…”
Section: Physical Propertiesmentioning
confidence: 99%
“…[105][106][107][108][109][110][111][112][113] Ah igher ZT value at ag iven temperature requires as uitable combination of high electrical conductivity and al ow thermal conductivity.AZT value of about 1i sc rucial for good thermoelectric materials to compete with conventional power generators.I nterestingly,t he electrical and thermal conductance of BP is not only anisotropic but exhibit orthogonally preferred conducting directions. TE materials undergo ad irect solid-state interconversion of thermal to electric energy.T he TE performance and efficiency are characterized by the dimensionless TE figure of merit ZT.…”
Section: Physical Propertiesmentioning
confidence: 99%
“…Phosphorene seems to satisfy all the key 2D Mott's variable range hopping is a dominant in-plane electrical and thermoelectric transport mechanism. 89 For the outof-plane electronic transport in hetereostructures, thermionic emission over the Schottky barrier determines charge transport at high temperatures, whereas hopping transport dominates only at low temperatures. 85 Phosphorene-based device structures show high photosensitivity and high-performance broad spectral range photodetectors have been demonstrated.…”
Section: Applications Of Phosphorene Electronic Devices and Sensorsmentioning
confidence: 99%
“…Based on the parameters obtained from fitting r and S, we also determine the density of states and slope of the density of states at the Fermi level, listed in Table I, assuming a À1 ¼ 25 nm (Ref. 15). The average hopping distance R is estimated from R $ 0:375ðT 0 =TÞ 1=4 a À1 .…”
Section: -3mentioning
confidence: 99%
“…12,13 More interestingly, BP is a strongly anisotropic material even in the basal plane: the thermal conductivity is much higher along the zigzag than the armchair direction, while electrical conductivity shows the opposite anisotropy. 14 Choi et al 15 demonstrated that the variable range hopping (VRH) dominates electrical transport in thin BP flakes (10-30 nm thick). However, the BP flake crystal orientation was not specified in Choi and the coupling between the VRH process and the intrinsic anisotropy in BP is unclear.…”
mentioning
confidence: 99%
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