2006
DOI: 10.1134/s1063782606110029
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Electrical and thermoelectric properties of ZnO under atmospheric and hydrostatic pressure

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Cited by 7 publications
(7 citation statements)
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“…Positions of these levels against the Γ -valley edge of conductivity band and pressure coefficients for these levels have been obtained. Figure 7 demonstrates the ε d = f (ε g ) dependence of the deep donor center energies for arsenic vacancies relative to the conduction band bottom on the band gap widths for InAs, CdSnAs 2 , CdGeAs 2 , GaAs and CdTe [32] and ZnO [33]. In brief, the figure is the main point of the paper.…”
Section: Resultsmentioning
confidence: 99%
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“…Positions of these levels against the Γ -valley edge of conductivity band and pressure coefficients for these levels have been obtained. Figure 7 demonstrates the ε d = f (ε g ) dependence of the deep donor center energies for arsenic vacancies relative to the conduction band bottom on the band gap widths for InAs, CdSnAs 2 , CdGeAs 2 , GaAs and CdTe [32] and ZnO [33]. In brief, the figure is the main point of the paper.…”
Section: Resultsmentioning
confidence: 99%
“…The n-type deep centers, for which the energy levels are located under the conductivity band bottom, have been calculated from the experimental baric and temperature dependences of electron transport in the CdTe [32] and n-ZnO [33] undoped bulk single crystals. It was found that ε d = 0.112 eV for n-CdTe, and ε d = 0.37 eV for n-ZnO.…”
Section: Comparison With Deep Donors In Undoped N-zno and N-cdtementioning
confidence: 99%
“…Such a character of R H (P) and ρ(P) dependences is caused by an increase in the ionization energy of a donor, likely an interstitial native defect of the zinc atom [1,7]:…”
Section: Resultsmentioning
confidence: 99%
“…Nevertheless, data on electron transport phenomena at atmospheric and hydrostatic pressures obtained for bulk crystals are still not sufficient (see [1][2][3][4][5][6] and references therein). Earlier in [7], the kinetic properties of charge carriers in ZnO bulk crystals had been investigated depending on temperature (77-400 K at atmospheric pressure) and hydrostatic pressure up to P = 7 GPa at 300 K. In the present work these investigations are continued, being supplemented with measurements of the resistivity at quasihydrostatic pressure up to P = 25 GPa at T = 300 K.…”
Section: Introductionmentioning
confidence: 93%
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