Abstract:The impurity electron spectrum for undoped bulk crystals of n-type arsenides GaAs, InAs, CdSnAs2, CdGeAs2, and CdTe, ZnO has been studied by quantitative analysis of baric and temperature dependences of kinetic coefficients. The vacancies in the anion sublattice in these semiconductors have been found to be corresponding to deep donor centers for following reasons. Shallow intrinsic centers at hydrostatic pressure are dependent on their own band. In contrast, the energy of deep impurity centers at isotropic co… Show more
Set email alert for when this publication receives citations?
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.