2005
DOI: 10.1016/j.tsf.2004.12.044
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Electrical and structural properties of Ni-doped Cu2O films prepared by pulsed laser deposition

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Cited by 86 publications
(41 citation statements)
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References 10 publications
(13 reference statements)
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“…Typically, CuO exhibited higher conductivity than Cu 2 O films due to high carrier concentration in CuO. The results shown in Table 2 are in very good agreement with the early reports on Hall mobility of Cu 2 O and CuO [27][28][29][30]. It has been reported that the Hall mobility of undoped Cu 2 O can be varied for a wide range (2-18 cm 2 v À1 s À1 ) depending on the film treatment and preparation conditions [30].…”
Section: Electrical Propertiessupporting
confidence: 87%
See 1 more Smart Citation
“…Typically, CuO exhibited higher conductivity than Cu 2 O films due to high carrier concentration in CuO. The results shown in Table 2 are in very good agreement with the early reports on Hall mobility of Cu 2 O and CuO [27][28][29][30]. It has been reported that the Hall mobility of undoped Cu 2 O can be varied for a wide range (2-18 cm 2 v À1 s À1 ) depending on the film treatment and preparation conditions [30].…”
Section: Electrical Propertiessupporting
confidence: 87%
“…The carrier mobility of Cu 2 O films is higher than the CuO films but the conductivity of Cu 2 O films were lower than the CuO films. The p-type conduction in copper oxides is attributed to the hole carriers generated by Cuvacancies [28]. Typically, CuO exhibited higher conductivity than Cu 2 O films due to high carrier concentration in CuO.…”
Section: Electrical Propertiesmentioning
confidence: 99%
“…The high resistivity at higher sputtering pressures was due to the amorphous nature of the films. The electrical resistivity achieved at the sputtering pressure of 4 Pa was lower than the pulsed laser deposited films [11]. Fig.…”
Section: Electrical Propertiesmentioning
confidence: 72%
“…Many techniques, such as electrodeposition [5,6], thermal evaporation [7], sol gel [8], solution growth [9], electron beam evaporation [10], pulsed laser deposition [11], spray pyrolysis [12], activated reactive evaporation [13], chemical vapor deposition [14], molecular beam epitaxy [15], dc and rf magnetron sputtering [16][17][18], have been employed to deposit Cu 2 O thin films onto various types of substrates. Among all the deposition techniques, dc reactive magnetron sputtering is one of the best techniques for depositing the films with high deposition rates at relatively low substrate temperatures.…”
Section: Introductionmentioning
confidence: 99%
“…Cu 2 O has high theoretical solar cell eciency, is available in abundance, and makes the process simple. Studies on its application to solar cells have been carried out since the 1970s; however, the practical application of Cu 2 O to solar cells is limited because of the diculty in improving (419) the electrical properties [7,8]. During the past few years, Cu 2 O, one of the representative of transparent metal oxide (TMOs) has been widely investigated due to its potential applications in gas sensors, capacitors and memory devices and high-T c superconductors.…”
Section: Introductionmentioning
confidence: 99%