Electrical and Photoluminescence Studies of {LT-GaAs/GaAs:Si} Superlattices Grown by MBE on (100)- and (111)A-Oriented GaAs Substrates

Effects of Crystallographic Orientation of GaAs Substrate and the Period of Plasmon Grid on THz Antenna Performance

“…The design of the developed antennas is based on our previous findings [ 27–29 ] and is aimed to minimize the relaxation time of photoexcited charge carriers. It consists of two parts: materials design and antenna design.…”

“…The temperature of the Si cell during the growth of the doped layers was 1120 °C which corresponds to the doping with an electron concentration of 2.5 × 10 18 cm −3 for GaAs film grown on GaAs (001) substrate. The conductivity type of the layers was controlled either by changing the As pressure (epitaxial growth) [ 27,28 ] or by changing the growth temperature (430 °C for Si‐doped and 480 °C for δ‐Si‐doped GaAs). [ 28 ] The final dimension of the fabricated i‐LT‐GaAs/GaAs:Si multilayer structures corresponds to 1215 µm in length, 738 µm in width, and 1 µm in thickness (Figure 1a).…”

“…The conductivity type of the layers was controlled either by changing the As pressure (epitaxial growth) [ 27,28 ] or by changing the growth temperature (430 °C for Si‐doped and 480 °C for δ‐Si‐doped GaAs). [ 28 ] The final dimension of the fabricated i‐LT‐GaAs/GaAs:Si multilayer structures corresponds to 1215 µm in length, 738 µm in width, and 1 µm in thickness (Figure 1a). In the grown multilayer structures, the LT‐GaAs ensures reducing the lifetime of photoexcited electrons owing to the high concentration of antisite defects (As Ga ), [ 30 ] while the GaAs:Si layers provide n‐type conductivity as grown on GaAs (100) and p‐type on GaAs (111)‐A.…”

“…In the grown multilayer structures, the LT‐GaAs ensures reducing the lifetime of photoexcited electrons owing to the high concentration of antisite defects (As Ga ), [ 30 ] while the GaAs:Si layers provide n‐type conductivity as grown on GaAs (100) and p‐type on GaAs (111)‐A. [ 28,31 ]…”

“…[ 34,35 ] It is assumed that the acceptors change the electronic band structure of antisite AsGa defects, the main centers of nonradiative recombination in LT‐GaAs. [ 36 ] Considering our previous results [ 27,28 ] and amphoteric properties of silicon, p‐type LT‐GaAs/p‐type GaAs:Si structure was grown on GaAs (111)‐A substrate and p‐type LT‐GaAs/n‐type GaAs:Si structure was grown on GaAs (100) substrate.…”