THz Radiation of Photoconductive Antennas based on {LT-GaAa/GaAa:Si} Superlattice Structures

Клочков, А. Н.; Климов, Е. А.; Solyankin, P. M.; Konnikova, Maria; Васильевский, И. С.; Виниченко, А. Н.; Shkurinov, Alexander P.; Галиев, Г. Б.

doi:10.1134/s0030400x20070097

Cited by 6 publications

(1 citation statement)

References 31 publications

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“…The concentration of charged active traps As Ga + can be increased in this way which is useful for terahertz applications. Also, previous studies [ 20,21 ] have shown that LTG structures grew on (111)A substrates and photoconductive antennas on the base of these structures can produce a stronger THz response upon photoexcitation.…”

Section: Introductionmentioning

confidence: 99%

Si‐Doping of Low‐Temperature‐Grown GaAs Heterostructures on (100) and (111)A GaAs Substrates

Клочков

Галиев

Климов

et al. 2022

Physica Status Solidi (b)

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Utilizing the amphoteric property of silicon impurity in GaAs (111)A for acceptor doping of low‐temperature‐grown (LTG‐) GaAs films and LTG‐GaAs‐based heterostructures for THz photoconductive applications is proposed and realized. The electronic properties of superlattice structures {LTG‐GaAs/GaAs:Si} grown by molecular beam epitaxy on (100) and (111)A GaAs substrates are experimentally investigated, where GaAs:Si are silicon‐doped GaAs layers grown at standard conditions. The use of GaAs substrates with surface orientation (111)A results in spatially indirect p‐type doping of LTG‐GaAs layers. In addition, the charge redistribution at the LTG‐GaAs/GaAs:Si interfaces, due to the presence of silicon atoms in GaAs:Si layers and antisite point defects in adjacent LTG‐GaAs layers, is also analyzed by means of band structure modeling.

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Section: Introductionmentioning

confidence: 99%

Si‐Doping of Low‐Temperature‐Grown GaAs Heterostructures on (100) and (111)A GaAs Substrates

Клочков

Галиев

Климов

et al. 2022

Physica Status Solidi (b)

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Structural Properties of {LTG-GaAs/GaAs:Si} Superlattices on GaAs(100) and (111)A Substrates

et al. 2022

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Terahertz photoconductive antennas based on silicon-doped GaAs (111)A

Klimov,

Klochkov,

Solyankin

et al. 2023

Int. J. Mod. Phys. B

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In this study we investigate a relatively new material for terahertz (THz) photoconductive antennas (PCAs): GaAs epitaxial films grown on (111)A-oriented semi-insulated GaAs substrates and doped with Si. GaAs:Si (111)A films with the required high resistance without postgrowth annealing have been grown by molecular-beam epitaxy. The Si doping of (111)A-oriented GaAs was expected to lead to the formation of acceptors that facilitate the activation of As[Formula: see text] traps. The relaxation times of nonequilibrium charge carriers in the films were measured in pump-probe experiment, and, finally, the electron mobility was estimated from the carrier lifetime and current–voltage characteristics measured under pulsed pumping by Ti:sapphire femtosecond laser. Dipole and bow-tie PCAs were fabricated, and the THz emission spectra and the total THz emission power were measured with varying applied voltage and optical excitation power. The properties of GaAs:Si (111)A films and the PCAs based on them are compared with LTG-GaAs (100) and (111)A-oriented films.

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THz Radiation of Photoconductive Antennas based on {LT-GaAa/GaAa:Si} Superlattice Structures

Cited by 6 publications

References 31 publications

Si‐Doping of Low‐Temperature‐Grown GaAs Heterostructures on (100) and (111)A GaAs Substrates

Si‐Doping of Low‐Temperature‐Grown GaAs Heterostructures on (100) and (111)A GaAs Substrates

Structural Properties of {LTG-GaAs/GaAs:Si} Superlattices on GaAs(100) and (111)A Substrates

Terahertz photoconductive antennas based on silicon-doped GaAs (111)A

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