Electrical and photocurrent characteristics of Au/PVA (Co-doped)/n-Si photoconductive diodes

Investigation of electrical and photovoltaic properties of Au/poly(propylene glycol)-b-polystyrene/n-Si diode at various illumination intensities

“…These values obtained with new poly(propylene glycol)-b-polystyrene block copolymer interfacial layer could be acceptable for many optoelectronic applications such as photodiode, solar cell, etc. compared with the others published in the literature [12,[16][17][18]. The other reasons for the deviation in electrical parameters from ideality are the number of surface states (N ss ), voltage dependence of ideality factor (n(V)) and barrier height (Φ B (V)) due to the existence of the interfacial polymer layer.…”

“…I-V relation for the diode can be given through the following thermionic emission theory equation [7,12]. here, I 0 , q, R s , n, k and T are reverse saturation current: the electronic charge, series resistance, ideality factor, Boltzmann constant and absolute temperature in Kelvin, respectively.…”

“…R s changes from region to region and it is effective on the I-V characteristics of the diode. The series resistance can be calculated by various techniques [7,[12][13][14][15], however, in order to obtain the behavior of the resistance in each region, Ohm's law where resistance (R i ) value is given by R i = dV/dI could simply be used. The obtained R i values of the diode are given in Figure 4.…”

Electrical characterization of Au/poly (linoleic acid)-g-poly(methyl methacrylate) (PLiMMA)/n-Si diode in dark and under illumination

“…When obtained results are compared with Au/n-Si/Ag (metal/ semiconductor Schottky diodes without any interfacial layer) diodes [4,13,29] and similar kind of Schottky diodes with organic/ polymeric interfacial layer [6,8], higher rectifying ratio and lower leakage current values were obtained for Au/poly (linoleic acid)-gpoly(methyl methacrylate) (PLiMMA)/n-Si diode due to existence of the interfacial PLiMMA graft copolymer layer.…”

The effect of Mo-doped PVC+TCNQ interfacial layer on the electrical properties of Au/PVC+TCNQ/p-Si structures at room temperature

“…The use of such organic interfacial layer in MS type Schottky barrier diodes (SBDs) converts them into metal-polymer-semiconductor (MPS) type SBDs. Such interfacial polymer layer does not only prevent inter-diffusion between metal and semiconductor but also elevates the performance of diode [10]. It is believed that the use of high dielectric interfacial layer can be useful in decreasing the density of interface states, surface damages, dislocations, series resistance (R s ) and in increasing shunt resistance (R sh ) and rectifier rate (RR) of the diodes.…”