Investigation of electrical and photovoltaic properties of Au/poly(propylene glycol)-b-polystyrene/n-Si diode at various illumination intensities

Abstract

Electrical and photovoltaic properties of Au/poly(propylene glycol)-b-polystyrene/n-Si diode were investigated under various illumination intensities. Field emission scanning electron microscope micrographs of the interfacial polymer layer were provided for verification of the nano-fibre pattern. The currentvoltage (I-V) measurements of the diode in the dark and under various illumination intensities (50-250 mW/cm 2 ) were carried out and the main electrical parameters of the diode such as leakage current (I 0 ), ideality factor (n), zerobias barrier height (Φ B0 ), series and shunt resistance (R s and R sh ), density of surface states (N ss ), open circuit voltage (V oc ) and short-circuit current (I sc ) were obtained in these conditions.

Synthesis and characterization of poly (linoleic acid)-g-poly(methyl methacrylate) graft copolymer with applying in Au/PLiMMA/n-Si diode

“…Main parameters, such as I 0 , n and Φ B0 , of the diode were calculated as mentioned and given in Table 3. Obtained values for I 0 , n and Φ B0 parameters are acceptable compared with the similar type structures in the literature [18][19][20][21][22]. It is clearly seen in Fig.…”

“…The cleaning of the semiconductor wafer, the formation of back ohmic and top Au contacts were realized by the same procedure reported in our previous studies [18,19].…”

“…Applied bias voltage dependence of the current in this type diode is given by thermionic emission theory as following [18,19]:…”

“…For n-type semiconductors, the energy of surface states E ss with respect to the energy of conduction band edge, E c , at the semiconductor surface is given by [19,21,25],…”

Novel Poly(linolenic acid) Graft Copolymers: Synthesis, Characterization and Electrical Properties

“…An n-type single crystal silicon (Si) wafer with (100) surface orientation, thickness of 500 μm, and diameter of 2″ was used as substrate to fabricate these diodes. After the single crystal was cut into a few pieces, the Si wafer was cleaned, and the formation of Ohmic, high-purity silver (99.99 % Ag) back contacts and gold (99.99 % Au) top contacts was realized by the same procedure reported in our previous studies [25,26]. After the formation of the Ohmic back contact, we obtained the interfacial PLilP-CLPtBA graft copolymer, which was coated onto a Si wafer piece using an electrospinning system.…”