Electrical and optical study of ITO films on glass and polymer substrates prepared by DC magnetron sputtering type negative metal ion beam deposition

You, Y.Z.; Kim, Y.S.; Choi, Dong-Whan; Jang, Ho‐Sun; Lee, J.H.; Kim, Daeil

doi:10.1016/j.matchemphys.2007.08.015

Cited by 59 publications

(32 citation statements)

References 16 publications

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“…1b-d) add no additional peaks indicating the amorphous nature for such coatings on the polymer substrate. This finding is in agreement with the work done by You et al [18] where they prepared ITO on glass and on polyethersulfone (PES) substrates. The ITO/glass films were polycrystalline while the ITO/PES films were amorphous.…”

Section: Resultssupporting

confidence: 93%

“…For touch screens, TC electrodes of sheet resistance in the range of 400-700 Ω/cm 2 are required [13]. ITO films have been prepared on polymer substrates using various techniques, such as radio frequency magnetron sputtering [8], ion beam assisted deposition [14], direct current (dc) reactive magnetron sputtering [15], pulse dc magnetron sputtering [16], roll-to-roll dc sputtering [13], dc sputter type negative metal ion source [17,18], etc. To the best of our knowledge the study of ITO prepared by electron beam evaporation technique on polymer substrates has not been reported.…”

Section: Introductionmentioning

confidence: 99%

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Properties of Indium Tin Oxide Thin Films Deposited on Polymer Substrates

et al. 2009

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Indium tin oxide thin films with different thicknesses were deposited on polymer substrates, held at room temperature, using electron beam evaporation. The dependence of structural properties, optical properties and room temperature resistivity on the indium tin oxide film thickness was studied. X-ray diffraction illustrates the amorphous structure for all the indium tin oxide prepared films. The high roughness of the polymer substrate affects the properties of indium tin oxide films. The transmittance, the resistivity, and the optical band gap decrease with increasing the film thickness while the refractive index increases. The present indium tin oxide films are amorphous, transparent and have relatively low resistivity. These properties are suitable as transparent electrode for organic light-emitting diodes, touch screens, and in piezoelectric applications.

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Section: Resultssupporting

confidence: 93%

Section: Introductionmentioning

confidence: 99%

Properties of Indium Tin Oxide Thin Films Deposited on Polymer Substrates

et al. 2009

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“…Transparent conducting oxides (TCO) are used mainly in optoelectronic applications such as flat panel displays, thin film transistors, electroluminescent devices, solar cells, gas sensors and light emitting diodes [1][2][3][4][5]. The value of electrical conductivity depends on various factors, one of which is the concentration of the dopant incorporated.…”

Section: Introductionmentioning

confidence: 99%

“…The strong dependence of ITO electro-optical properties on oxygen pressure and stoichiometry ratio during the growth process [4] adds extra difficulties to this technique during the growth process. The basic properties of ITO oxides are primarily low electrical resistivity (of the order of 10 -3 ohm cm -1 at room temperature) and high optical transparency (about 90 % in the visible range or the optical spectrum) and high infrared reflectance [2].…”

Section: Introductionmentioning

confidence: 99%

The effect of varying temperature and O2 flow rate in ex situ annealed tin-doped indium for fabrication of commercial grade indium tin oxide

Kiyani

Jalili

2014

J Theor Appl Phys

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In this work, tin-doped indium was deposited on a glass substrate via the electron beam evaporation technique. Then, the as-grown thin films were baked in the presence of oxygen at different O 2 flow rates and temperatures inside a furnace to obtain transparent conducting oxide thin film structures. The electrical and optical properties of the layers were investigated, the thickness of all samples was kept at 500 nm and the rate of deposition was set at 0.1 nm min -1 . The best optical and electrical properties were obtained at O 2 flow rate of 1.5 Nl min -1 and temperatures of 500°C where above 90 % optical transparency and B4 9 10 -3 ohm cm -1 electrical resistivity were achieved.

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“…The recent interest in flexible electronic devices has increased demand for processes offering low temperature deposition of high quality ITO films onto large area polymeric substrates [12]. The move to polymeric substrates is driven by their relatively low cost, mechanical flexibility, and light weight [2].…”

Section: Introductionmentioning

confidence: 99%