Electrical and Optical Properties of Intermetallic Compounds. II. Gallium Antimonide

Blunt, R. F.; Hosler, W. R.; Frederikse, H. P. R.

doi:10.1103/physrev.96.576

Cited by 30 publications

(8 citation statements)

References 4 publications

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“…The lattice constants, 6.0963A for GaSb and 6.1361A for A1Sb, are roughly equal in magnitude to those reported by Blunt, et al (13,14), but are reversed in order of assignment, i.e., Blunt assigns the larger value to GaSb. The cell size for GaSb is slightly higher than that obtained by Kolm, et aL (2).…”

Section: Resultssupporting

confidence: 59%

Preparation and Properties of AlSb-GaSb Solid Solution Alloys

Miller

Goering

Himes

1960

J. Electrochem. Soc.

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Ingots of the quasi-binary GaSb-A1Sb alloy were prepared by progressive casting and zone casting at various rates of crystallization. Results of x-ray diffraction studies, metallographic studies, hardness determinations, and chemical analyses indicate that, with the possible exception of a narrow composition range between 10 and 30 mole % A1Sb which was not investigated, solid solution prevails in the system. Bulk specimens of single phase, solid solution alloy were obtained by use of low linear rates of crystallization (0.05 in./hr), while at higher rates of crystallization (1/a to 1z/4 in./hr) two intermingled solid phases were characteristically obtained.Vegard's law was found to be at least roughly applicable; with lattice constants for the alloys ranging between values of 6.0963A for pure GaSb and 6.1361A for pure A1Sb. Optical energy gaps determined for alloy specimens increased regularly with cell size from a value of 0.68 ev for GaSb to a value of 1.74 ev for A1Sb. Values of electrical resistivity and hole mobility for the relatively impure alloy specimens were also intermediate between those for the compounds in a like state of purity.Liquidus data are also presented for the system.

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Section: Resultssupporting

confidence: 59%

Preparation and Properties of AlSb-GaSb Solid Solution Alloys

Miller

Goering

Himes

1960

J. Electrochem. Soc.

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“…Very limited studies have been reported on the infrared absorption in GaSb [19][20][21][22] (1) free carrier absorption (FCA) by free electrons;…”

Section: Optical Absorption Analysesmentioning

confidence: 99%

Below bandgap optical absorption in tellurium-doped GaSb

Chandola¹,

Pino²,

Dutta³

2005

Semicond. Sci. Technol.

105

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Enhancement in below bandgap room temperature infrared transmission has been observed in tellurium (Te)-doped GaSb bulk crystals. The effect of Te concentration on the transmission characteristics of GaSb has been experimentally and theoretically analysed. Undoped GaSb is known to exhibit p-type conductivity with residual hole concentration of the order of (1-2) × 10 17 cm −3 at room temperature due to the formation of native defects. For such samples, inter-valence band absorption has been found to be the dominant absorption mechanism. The residual holes could be compensated by n-type dopants such as Te. With increasing Te concentration, free carrier absorption due to electrons and inter-valley transitions in the conduction subband become significant. The dependences of various absorption mechanisms as a function of wavelength have been discussed in this paper.

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“…1 For infrared nonlinear optical applications, substrates with high optical transparency (low linear absorption coefficient) in the wavelength range of interest is necessary. [2][3][4][5][6][7] Infrared absorption has been studied for the binaries, namely, GaSb [8][9][10][11] and InSb. [12][13][14][15][16] To the best of our knowledge, this is the first report on the infrared transmission characteristics of bulk Ga 1-x In x Sb which has a tunable bandgap in the range of 0.17-0.73 eV (1.77-6.8 µm).…”

Section: Introductionmentioning

confidence: 99%

Influence of native defects on the infrared transmission of undoped Ga1−xInxSb bulk crystals

Kim

Chandola

Guha

et al. 2005

Journal of Elec Materi

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The below bandgap infrared transmission (up to 25 µm) in undoped Ga 1-x In x Sb bulk crystals has been studied for the first time and found to be limited by native defects such as antisites and vacancies found in antimonide-based III-V compounds. For the gallium-rich alloy compositions (x Ͻ 0.5 in Ga 1-x In x Sb), the crystals exhibit p-type conductivity with an increase in net acceptor concentration and an increase in gallium content in the crystals. For x Ͼ 0.5 (the indium-rich alloy compositions), the crystals exhibit n-type conductivity when the net donor concentration and indium content in the crystals increase. A correlation between the optical transmission and the residual carrier concentration arising from the native acceptors and donors has been observed. Due to donor-acceptor compensation, crystals with alloy compositions in the range of x ϭ 0.5-0.7 exhibit high optical transmission for a wide wavelength range (up to 22 µm). The light hole to heavy hole interband transition in the valence band and the free electron absorption in the conduction band have been found to be the two dominant absorption processes.

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Electrical and Optical Properties of Intermetallic Compounds. II. Gallium Antimonide

Cited by 30 publications

References 4 publications

Preparation and Properties of AlSb-GaSb Solid Solution Alloys

Preparation and Properties of AlSb-GaSb Solid Solution Alloys

Below bandgap optical absorption in tellurium-doped GaSb

Influence of native defects on the infrared transmission of undoped Ga1−xInxSb bulk crystals

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