Electrical and optical properties of transparent conducting InxGa1−xN alloy films deposited by reactive co-sputtering of GaAs and indium

Yadav, B. S.; Mohanta, P.; Srinivasa, R.S.; Major, S.S.

doi:10.1016/j.tsf.2013.11.117

Cited by 9 publications

(8 citation statements)

References 40 publications

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“…Yadav et al investigated polycrystalline In x Ga 1−x N layers and estimated isotropically averaged electron effective mass parameters for In contents from 0.4 to 1 combining parameters obtained from electrical Hall effect and optical reflectivity measurements. 5 The reported values vary between 0.13 m 0 and 0.42 m 0 , and carry large uncertainty limits of more than 50%. Furthermore, values determined from the measured plasma frequencies and the estimated energies of Burstein-Moss shifts assuming parabolic bands differ substantially among the reported set.…”

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confidence: 93%

“…The determination of free charge carrier effective mass at room temperature or higher (under device operation condition) temperature is still a challenging task. There are only few reports which estimate experimentally the effective mass parameters in In x Ga 1−x N. 5,6 Eljar-rat et al estimated an isotropic average of the electron effective mass parameter between 0.14 m 0 and 0.16 m 0 (m 0 is the free electron mass) for multilayer quantum well structures of In 0.05 Ga 0.95 N and In 0.2 Ga 0.8 N layers using a numerical Kramers-Kronig extension of electron energy loss spectra. Yadav et al investigated polycrystalline In x Ga 1−x N layers and estimated isotropically averaged electron effective mass parameters for In contents from 0.4 to 1 combining parameters obtained from electrical Hall effect and optical reflectivity measurements.…”

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confidence: 99%

“…Furthermore, values determined from the measured plasma frequencies and the estimated energies of Burstein-Moss shifts assuming parabolic bands differ substantially among the reported set. 5 It is well known that the conduction band of InN exhibits nonparabolicity, while in GaN the conduction band is nearly parabolic. 7 Therefore, the electron effective mass increases in InN with increasing free electron density, which was experimentally verified by Hofmann et al using optical Hall effect measurements.…”

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confidence: 99%

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Electron effective mass in In0.33Ga0.67N determined by mid-infrared optical Hall effect

Armakavicius

Stanishev

Knight

et al. 2018

Applied Physics Letters

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Mid-infrared optical Hall effect measurements are used to determine the free charge carrier parameters of an unintentionally doped wurtzite-structure c-plane oriented In 0.33 Ga 0.67 N epitaxial layer. Room temperature electron effective mass parameters of m * ⊥ = (0.205 ± 0.013) m 0 and m * = (0.204 ± 0.016) m 0 for polarization perpendicular and parallel to the c-axis, respectively, were determined. The free electron concentration was obtained as (1.7 ± 0.2) × 10 19 cm −3 . Within our uncertainty limits we detect no anisotropy for the electron effective mass parameter and we estimate the upper limit of the possible effective mass anisotropy is 7%. We discuss the influence of band nonparabolicity on the electron effective mass parameter as a function of In content. The effective mass parameter is consistent with a linear interpolation scheme between the conduction band mass parameters in GaN and InN when the strong nonparabolicity in InN is included. The In 0.33 Ga 0.67 N electron mobility parameters were found to be anisotropic supporting previous experimental findings for wurtzite-structure GaN, InN, and Al x Ga 1−x N epitaxial layers with c-plane growth orientation.

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confidence: 93%

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confidence: 99%

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confidence: 99%

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Electron effective mass in In0.33Ga0.67N determined by mid-infrared optical Hall effect

Armakavicius

Stanishev

Knight

et al. 2018

Applied Physics Letters

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“…The aim of these nanostructure preparation alternatives is to obtain good structural quality III-V semiconductors compatible with traditional semiconductor technology [13][14][15][16]. The success of these efforts will translate in the production of low-cost optical devices, compared with some widely used epitaxial techniques, such as molecular-beam epitaxy (MBE) [17][18][19][20][21][22][23].…”

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confidence: 99%

Structural and optical study of alternating layers of In and GaAs prepared by magnetron sputtering

et al. 2019

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Currently, the obtention of nano-structures based on III-V materials is expensive. This calls for novel and inexpensive nanostructure manufacturing approaches. In this work we report on the manufacture of a nanostructures consisting of alternating layers of In and GaAs on a silicon substrate by magnetron sputtering. Furthermore, we characterized the produced nanostructures using secondary ion mass spectroscopy (SIMS), X-ray diffraction analysis, and Raman spectroscopy. SIMS revealed variation in the concentration of In atoms across In/GaAs/In interphases, and X-ray diffraction revealed planes corresponding to phases associated with GaAs and InAs due to In interfacial diffusion across GaAs layers. Finally, in order to study the composition and crystalquality of the manufactured nanostaructures, Raman spectra were taken using laser excitation lines of 452 nm, 532 nm, and 562 nm at different points across the nanostructures.This allowed to determine the transverse and longitudinal optical modes of GaAs and InAs,characteristic of a two-mode behavior. An acoustic longitudinal vibrational mode LA(Γ) of GaAs and an acoustic longitudinal mode activated by disorder (DALA) were observed. These resulted from the substitution of Ga atoms for In atoms in high concentrations due to the generation of Ga(VGa) and/or Arsenic(VAs) vacancies.This set of analyses show that magnetron sputtering can be aviable and relatively low-cost technique to obtain this type of semiconductors.

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“…Growth of InGaN thin films can be obtained by using several methods such as; molecular beam epitaxy (MBE) [6][7], metal organic chemical vapor deposition (MOCVD) [8][9] and sputtering technique [10][11][12][13][14][15][16]. Sputtering thin film growth technique is basically a process in which after an inert gas (noble gas, usually argon), which is sent between two differently polarized electrodes, is converted into a positive ion, the material is accelerated towards the target material in the cathode (negative electrode) these scraped particles will grow one by one on the base placed exactly opposite the target [17][18].…”

Section: Introductionmentioning

confidence: 99%

N2 Gaz Akiş Hizinin, Sputter Tekni̇ği̇nden Elde Edi̇len İndi̇yum-Galyum-Ni̇trür Üçlü İnce Fi̇lmi̇ni̇n Opti̇k, Yapisal Ve Morfoloji̇k Özelli̇kleri̇ne Etki̇si̇ni̇n İncelenmesi̇

Erdoğan

Kundakçı

2018

Ömer Halisdemir Üniversitesi Mühendislik Bilimleri Dergisi

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In this research work, InGaN (Indium Gallium Nitride) triple compound was grown under different N 2 gas flow rates by using sputtering technique. The structural, optical and morphological characteristics of the InGaN compound have been studied in detail. In the XRD analysis, films exhibited hexagonal crystal structure. The films appear at lower wavelengths in visible region and absorption values begin to increase sharply from about 550-560 nm and reach the highest absorption value in the Near-UV region. When gas flow rates increased, the optical band gaps of the film increased. In SEM, the film exhibits dense coverage of the material on the surface of the substrate without the presence of voids, pinholes or cracks. In the results of the AFM, there are locally peaks and valleys, and partially homogeneous and circular-like clusters are arranged. Films are suitable structures for use in device applications.

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Electrical and optical properties of transparent conducting InxGa1−xN alloy films deposited by reactive co-sputtering of GaAs and indium

Cited by 9 publications

References 40 publications

Electron effective mass in In0.33Ga0.67N determined by mid-infrared optical Hall effect

Electron effective mass in In0.33Ga0.67N determined by mid-infrared optical Hall effect

Structural and optical study of alternating layers of In and GaAs prepared by magnetron sputtering

N2 Gaz Akiş Hizinin, Sputter Tekni̇ği̇nden Elde Edi̇len İndi̇yum-Galyum-Ni̇trür Üçlü İnce Fi̇lmi̇ni̇n Opti̇k, Yapisal Ve Morfoloji̇k Özelli̇kleri̇ne Etki̇si̇ni̇n İncelenmesi̇

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