N2 Gaz Akiş Hizinin, Sputter Tekni̇ği̇nden Elde Edi̇len İndi̇yum-Galyum-Ni̇trür Üçlü İnce Fi̇lmi̇ni̇n Opti̇k, Yapisal Ve Morfoloji̇k Özelli̇kleri̇ne Etki̇si̇ni̇n İncelenmesi̇

Abstract

In this research work, InGaN (Indium Gallium Nitride) triple compound was grown under different N 2 gas flow rates by using sputtering technique. The structural, optical and morphological characteristics of the InGaN compound have been studied in detail. In the XRD analysis, films exhibited hexagonal crystal structure. The films appear at lower wavelengths in visible region and absorption values begin to increase sharply from about 550-560 nm and reach the highest absorption value in the Near-UV region. When gas flow rates increased, the optical band gaps of the film increased. In SEM, the film exhibits dense coverage of the material on the surface of the substrate without the presence of voids, pinholes or cracks. In the results of the AFM, there are locally peaks and valleys, and partially homogeneous and circular-like clusters are arranged. Films are suitable structures for use in device applications.