Electrical and optical properties of ZnO thin film as a function of deposition parameters

Jeong, Woon-Jo; Park, Gye-Choon

doi:10.1016/s0927-0248(00)00075-1

Cited by 112 publications

(31 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…11,12 Furthermore, Al doping enhances electrical conductivity by inducing free charge carriers and also stabilizes electrical stability of the ZnO thin film by impeding the chemisorption of oxygen at exposed surfaces including grain boundaries. 13 Various deposition techniques are used to prepare high quality AZO film with resistivity under 10 −3 Ω cm and visible transmittance over 85%, such as DC sputtering, 14 pulsed laser deposition (PLD), 15 Atomic layer deposition (ALD), 16 and chemical vapor deposition (CVD). 12 However, these high vacuum methods have inherent instrumental complexity, high investment costs, and limited industrial scalability.…”

mentioning

confidence: 99%

Highly transparent conductive electrode with ultra-low HAZE by grain boundary modification of aqueous solution fabricated alumina-doped zinc oxide nanocrystals

Nian

Callahan²,

Efstathiadis

et al. 2015

APL Materials

View full text Add to dashboard Cite

mentioning

confidence: 99%

Highly transparent conductive electrode with ultra-low HAZE by grain boundary modification of aqueous solution fabricated alumina-doped zinc oxide nanocrystals

Nian

Callahan²,

Efstathiadis

et al. 2015

APL Materials

View full text Add to dashboard Cite

“…11, the crystallite sizes of the deposited films are 60.3, 45.7 and 42.3 nm, using m_ZnO, sm_ZnO and n_ZnO (LD) targets, respectively. According to other authors, 9,10,[35][36][37] the resistivity of ZnO is strongly influenced by the quantity of oxygen incorporated being the highest resistivity value (above 10 9 Ω·cm) obtained in quasi stoichiometry films. Nonetheless, the SEM top view images show a very smooth surface with comparable morphologies (see SEM images in Fig.…”

Section: Resultsmentioning

confidence: 78%

Sintering Behavior of Nano‐ and Micro‐Sized ZnO Powder Targets for rf Magnetron Sputtering Applications

Neves

Barros

Antunes³

et al. 2011

J. Am. Ceram. Soc.

View full text Add to dashboard Cite

In this work, the nonisothermal sintering behavior of as‐received commercial high purity ZnO micrometric (m_ZnO), submicrometric (sm_ZnO) and nanometric (n_ZnO) powders was studied. The sintering behavior for sputtering target production was evaluated by changing the green density of samples from 62% of theoretical density (TD) to 35%. We observed that for n_ZnO powder, the maximum shrinkage rate (MSR) temperature (TMSR) was not affected by the green density, and that it was reached at lower temperatures (~710°C) compared with m_ZnO and sm_ZnO powders. For these powders, the temperature of MSR increased from 803°C to 934°C and from 719°C to 803°C as TD changed from 62% to 35% TD, respectively. Small grain size (~0.560 μm) and high density targets were obtained for n_ZnO when sintered at temperatures below the TMSR. Heating rate from 1°C to 15°C/min led to lower activation energy for n_ZnO (~201 ± 3 kJ/mol) than for the submicrometric (sm_ZnO) (~332 ± 20 kJ/mol) and micrometric (m_ZnO) (~273 ± 9 kJ/mol) powders. Using the model proposed by Bannister and Woolfrey, an n value of 0.75 was found, which was correlated with a combination of viscous flow and volume diffusion mechanisms that should control the initial stage of n_ZnO sintering. No significant differences were observed for n_ZnO powder in terms of density when the size of targets (scale‐up effect) was increased, while in the case of m_ZnO and sm_ZnO, a delay in the densification was observed, which was related to the higher sinterability of n_ZnO powder. Two inches ZnO ceramic targets with different particle sizes and final densities were used in an rf magnetron sputtering system to produce ZnO films under the same deposition conditions. Films with thickness around 100 nm and good uniformity were produced using those targets, and no variation was observed in the optical and morphological properties. However, low electrical resistivity (1.4 Ω·cm) films were obtained with n_ZnO targets, which could be explained in terms of a nonstoichiometric Zn:O composition of the started powders.

show abstract

“…In addition, AZO films exhibit similar electronic properties, higher optical transmittance, lower electrical resistivity and better stability as compared with undoped ZnO. Therefore, AZO films are very attractive candidate for many applications including display windows [2], solar cells [6], optoelectronic devices [7], optical coatings [8], gas and chemical sensors [9].…”

Section: Introductionmentioning

confidence: 99%

Comparative study of structural and visible luminescence properties of AZO thin film deposited on GaAs and porous GaAs substrates

Naddaf

2015

Vacuum

View full text Add to dashboard Cite

Electrical and optical properties of ZnO thin film as a function of deposition parameters

Cited by 112 publications

References 8 publications

Highly transparent conductive electrode with ultra-low HAZE by grain boundary modification of aqueous solution fabricated alumina-doped zinc oxide nanocrystals

Highly transparent conductive electrode with ultra-low HAZE by grain boundary modification of aqueous solution fabricated alumina-doped zinc oxide nanocrystals

Sintering Behavior of Nano‐ and Micro‐Sized ZnO Powder Targets for rf Magnetron Sputtering Applications

Comparative study of structural and visible luminescence properties of AZO thin film deposited on GaAs and porous GaAs substrates

Contact Info

Product

Resources

About