Comparative study of structural and visible luminescence properties of AZO thin film deposited on GaAs and porous GaAs substrates

Naddaf, M.

doi:10.1016/j.vacuum.2015.08.023

Cited by 11 publications

(4 citation statements)

References 50 publications

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“…The first maximum was observed at 380 nm and the second maximum was observed at 620 nm. This is a typical luminescence spectrum of ZnO regarding emission in the infrared and UV region [53,54]. Photoluminescence maxima were not observed.…”

Section: Measurement Of Luminescence Propertiesmentioning

confidence: 79%

Luminescence Properties of Nano Zinc Oxide Doped with Al(III) Ions Obtained in Microwave-Assisted Hydrothermal Synthesis

et al. 2022

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The hydrothermal method of obtaining nano zinc oxide doped with different contents of aluminum ions (III) was presented and discussed in this paper. Aqueous solution of Zn(NO3)2*6H2O and Al(NO3)3*9H2O salts mixture were used as the synthesis precursor. In order to reduce the process time all reactions were performed in a microwave reactor. The influence of process parameters and the content of impurity ions on the properties of synthesized nano zinc oxide were analyzed. In addition to zinc oxide doped with Al(III) ions, an additional spinel phase (ZnAl2O4) was obtained. The luminescent properties of nano zinc oxide as a function of the dopant ions were also discussed. Based on the luminescence measurements results, it was found that the luminescence intensity decreases with the increasing dopant content. The obtained materials are aimed to be implemented as luminescent materials in optoelectronic and sensors.

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Section: Measurement Of Luminescence Propertiesmentioning

confidence: 79%

Luminescence Properties of Nano Zinc Oxide Doped with Al(III) Ions Obtained in Microwave-Assisted Hydrothermal Synthesis

et al. 2022

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“…As discussed above, the porosity of GaAs substrate is beneficial to enhance the visible PL intensity of ZnO as well. Naddaf et al 16 have reported an increase of visible PL intensity of ZnO films grown by RF magnetron sputtering when porous GaAs is used as a substrate. The authors demonstrated a strong relationship with the change in the content of zinc and oxygen related defects in the film.…”

Section: Resultsmentioning

confidence: 99%

“…The authors demonstrate the contribution of porous GaAs to the enhancement of photoluminescence intensity of the ZnO film in the visible spectral region, which makes ZnO/porous GaAs structure a promising candidate for light emitting devices. 16 To the best of our knowledge, only this work has been published on ZnO/porous GaAs and more research are needed for advanced devices such as photodetectors.…”

Section: Introductionmentioning

confidence: 99%

Comparative study of aqueous solution processed ZnO/GaAs and ZnO/porous GaAs films

et al. 2019

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“…Porous GaAs can also be used as a substrate for growing other semiconductor materials [8][9][10], as well as chemical sensors [11]. Previous studies have shown that both the surface morphology and the porous structure of the layer play a crucial role [12,13].…”

Section: Introductionmentioning

confidence: 99%

Luminescent Properties of Electrochemically Etched Gallium Arsenide

Gavrilchenko¹,

Milovanov²,

Ivanov³

et al. 2021

J. Nano- Electron. Phys.

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The paper presents the results of structural and photoluminescent (PL) studies of porous GaAs layers created by electrochemical etching of GaAs wafers. Structural and morphological properties of porous GaAs were analyzed by SEM and Auger spectroscopy. The analysis of SEM images shows the presence of meso-and macropores and nanocrystallites in the porous layer. Some samples have the pyramidal formations on the surface. Auger spectra of crystalline and porous GaAs show different stoichiometry of the samples. The photoluminescence of the formed material is characterized by the emission band in the region of 1.5-3.2 eV, and the dependence of the PL spectrum on the wavelength of exciting light is observed. As the wavelength of the exciting light increases, the maxima of the emission spectra shift to the region of lower energies. This behavior of the PL spectrum (shift of the PL maximum depending on the wavelength of excitation emission) is characteristic of heterogeneous in thickness electrochemically etched porous structures. The nature of the multiband PL spectrum of porous GaAs can be explained by the existence of hydrated oxides of arsenic and gallium on the surface of the samples and the formation of nanocrystallites in the porous layers of GaAs. The article presents an estimation of the possible sizes of nanocrystallites under the assumption that PL is created due to quantum-dimensional effects.

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Comparative study of structural and visible luminescence properties of AZO thin film deposited on GaAs and porous GaAs substrates

Cited by 11 publications

References 50 publications

Luminescence Properties of Nano Zinc Oxide Doped with Al(III) Ions Obtained in Microwave-Assisted Hydrothermal Synthesis

Luminescence Properties of Nano Zinc Oxide Doped with Al(III) Ions Obtained in Microwave-Assisted Hydrothermal Synthesis

Comparative study of aqueous solution processed ZnO/GaAs and ZnO/porous GaAs films

Luminescent Properties of Electrochemically Etched Gallium Arsenide

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