Electrical and optical properties of CuZnSnS thin films prepared by rf magnetron sputtering process

Seol, Jaeseung; Lee, Sang-Yul; Lee, Jae-Choon; Nam, Hyo-Duk; Kim, Kyoo-Ho

doi:10.1016/s0927-0248(02)00127-7

Cited by 509 publications

(206 citation statements)

References 6 publications

Supporting

Mentioning

180

Contrasting

Unclassified

Order By: Relevance

“…2 However, due to the low availability of In and Ga in the Earth's crust, the increasing world demand for ITO touch-sensitive displays, and the toxicity of Se, Cu 2 ZnSnS 4 (CZTS) in the kesterite phase has been proposed as a candidate to replace CIGS as the cell absorber layer. CZTS has an absorption coefficient over 10 4 cm −1 and a band gap of ∼ 1.5 eV, [3][4][5][6][7][8] which makes it suitable for applications in thin-film solar cells. The deposition of the precursors can be done under vacuum conditions as in the case of electron-beam evaporation 3,9,10 or radiofrequency (rf) magnetron sputtering.…”

Section: Introductionmentioning

confidence: 99%

“…The deposition of the precursors can be done under vacuum conditions as in the case of electron-beam evaporation 3,9,10 or radiofrequency (rf) magnetron sputtering. 4,11 Alternatively, the deposition of the precursors can be done under nonvacuum conditions as, for example, through spray pyrolysis, 12,13 the solgel method, 5 or sol-gel spin-coated deposition. 14 The CZTS is formed with a subsequent sulfurization of the precursors.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Photoluminescence and electrical study of fluctuating potentials in Cu2ZnSnS4-based thin films

et al. 2011

View full text Add to dashboard Cite

In this work, we investigated structural, morphological, electrical, and optical properties from a set of Cu 2 ZnSnS 4 thin films grown by sulfurization of metallic precursors deposited on soda lime glass substrates coated with or without molybdenum. X-ray diffraction and Raman spectroscopy measurements revealed the formation of single-phase Cu 2 ZnSnS 4 thin films. A good crystallinity and grain compactness of the film was found by scanning electron microscopy. The grown films are poor in copper and rich in zinc, which is a composition close to that of the Cu 2 ZnSnS 4 solar cells with best reported efficiency. Electrical conductivity and Hall effect measurements showed a high doping level and a strong compensation. The temperature dependence of the free hole concentration showed that the films are nondegenerate. Photoluminescence spectroscopy showed an asymmetric broadband emission. The experimental behavior with increasing excitation power or temperature cannot be explained by donor-acceptor pair transitions. A model of radiative recombination of an electron with a hole bound to an acceptor level, broadened by potential fluctuations of the valence-band edge, was proposed. An ionization energy for the acceptor level in the range 29-40 meV was estimated, and a value of 172 ± 2 meV was obtained for the potential fluctuation in the valence-band edge.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Photoluminescence and electrical study of fluctuating potentials in Cu2ZnSnS4-based thin films

et al. 2011

View full text Add to dashboard Cite

show abstract

“…[4][5][6][7][8][9] CZTSSe has optimal band gap (1.0-1.5 eV, depending on the S, Se compositions), 10 and also high absorption coefficient (∼10 4 cm −1 ) that make it suitable for solar cell application. 11 Nevertheless, the highest achieved efficiency, so far, using CZTSSe is 12.6%, 12 which is only about half of the similar structured CIGS-based solar cell. Among the solar cell parameters, poor open circuit voltage (V oc ) i.e., large V oc -deficiency (E g /q -V oc ) is considered as the primary limiting factor to achieve the highest possible efficiency in CZTSSe-based solar cells.…”

Section: Introductionmentioning

confidence: 99%

A comparative study on charge carrier recombination across the junction region of Cu2ZnSn(S,Se)4 and Cu(In,Ga)Se2 thin film solar cells

et al. 2016

View full text Add to dashboard Cite

A comparative study with focusing on carrier recombination properties in Cu2ZnSn(S,Se)4 (CZTSSe) and the CuInGaSe2 (CIGS) solar cells has been carried out. For this purpose, electroluminescence (EL) and also bias-dependent time resolved photoluminescence (TRPL) using femtosecond (fs) laser source were performed. For the similar forward current density, the EL-intensity of the CZTSSe sample was obtained significantly lower than that of the CIGS sample. Primarily, it can be attributed to the existence of excess amount of non-radiative recombination center in the CZTSSe, and/or CZTSSe/CdS interface comparing to that of CIGS sample. In case of CIGS sample, TRPL decay time was found to increase with the application of forward-bias. This can be attributed to the reduced charge separation rate resulting from the reduced electric-field at the junction. However, in CZTSSe sample, TRPL decay time has been found almost independent under the forward and reverse-bias conditions. This phenomenon indicates that the charge recombination rate strongly dominates over the charge separation rate across the junction of the CZTSSe sample. Finally, temperature dependent VOC suggests that interface related recombination in the CZTSSe solar cell structure might be one of the major factors that affect EL-intensity and also, TRPL decay curves.

show abstract

“…However, CIGS solar cells adopt rare earth elements. In this point of view Cu 2 ZnSn(S,Se) 4 (CZTSSe) is a very promising absorber material [1][2][3][4]. It includes earth abundant elements Sn, Zn, moreover less toxic S and Se.…”

Section: Introductionmentioning

confidence: 99%

Effect of excess selenium in the formation of Cu2Zn1.5Sn1.2(S0.9+Se0.1)4 alloys for solar cell applications

Sripan¹,

Viswanath²,

Ganesan³

2016

Nanosystems: Phys. Chem. Math.

View full text Add to dashboard Cite

Copper zinc tin sulfide/selenide Cu 2 ZnSn(S, Se) 4 (CZTSSe) is an alternative promising material for solar cell applications. It exhibits a high optical absorbance and tunable band gap. We have investigated the effect of excess selenium on the formation of CZTSSe phase which was prepared by the thermal melt method. The CZTSSe alloys were characterized by X-ray diffraction (XRD), Raman spectroscopy and UV-VIS spectroscopy. The crystallographic structure and phase were confirmed by X-ray diffraction and Raman spectroscopic techniques. In Raman spectroscopy, we found that the phase shifts from 327 cm −1 to 338 cm −1 when the selenium content excess is 5 %. In optical studies, a band gap for the CZTSSe alloys of about 1.43 eV to 1.44 eV was observed.

show abstract

Electrical and optical properties of CuZnSnS thin films prepared by rf magnetron sputtering process

Cited by 509 publications

References 6 publications

Photoluminescence and electrical study of fluctuating potentials in Cu2ZnSnS4-based thin films

Photoluminescence and electrical study of fluctuating potentials in Cu2ZnSnS4-based thin films

A comparative study on charge carrier recombination across the junction region of Cu2ZnSn(S,Se)4 and Cu(In,Ga)Se2 thin film solar cells

Effect of excess selenium in the formation of Cu2Zn1.5Sn1.2(S0.9+Se0.1)4 alloys for solar cell applications

Contact Info

Product

Resources

About