Electrical and Optical Properties of p · ZnSnAs₂/n·ZnSe Heterodiode

Abstract

A p·ZnSnAs2/n·ZnSe heterodiode was prepared by LPE from Sn solution on a low-resistivity n·ZnSe substrate. The I-V characteristics of the diode were measured, and it was found to have a good rectification ratio of 104 at 1 V. The diode showed a photoresponse extending over a wide wavelength region between 0.4 and 1.9 µm. The measurements of the C-V characteristics showed that the diode had an abrupt junction with a diffusion potential of 0.60 V. The dielectric constant for ZnSnAs2 was first estimated from the analysis of the C-V characteristics: ε A =12.0ε 0. The values of the minority carrier lifetime were obtained from the decay curves of EBIC as 70 ns and 0.4 ns for n·ZnSe and p·ZnSnAs2, respectively.

Low‐temperature heteroepitaxial growth of InAlAs layers on ZnSnAs2/InP(001)

“…As far as we know, these reports are only of ZnSnAs 2 /InP(001) by MBE and ZnSnAs 2 /ZnSe(111) grown by liquid phase epitaxy [26]. We present for the first time the hetero epitaxy of III-V/ZnSnAs 2 with the exception of InP.…”

Diffusion lengths of carriers in n- and p-type ZnMgSSe cladding layers of green laser diodes

“…Carrier diffusion lengths for bulk or thin-film ZnSe and CdSe have been determined by various groups and methods, [1][2][3][4][5][6][7] but the values of diffusion lengths of carriers in ZnMgSSe, employed as cladding material in II-VI based blue-green laser diodes, 8,9 has to the best of our knowledge not yet been reported. We have in the past used a modification of the method first reported by Zarem et al 10 to measure the carrier diffusion length in ZnCdSe quantum wells by means of cathodoluminescence ͑CL͒ microscopy.…”

Diffusion lengths of excited carriers in CdxZn1−xSe quantum wells

“…However, to the best of our knowledge, there has been only one report 1 of a diffusion length for excited carriers in CdZnSe quantum wells employed in II-VI based blue-green laser diodes, although carrier diffusion lengths for bulk or thin films ZnSe and CdSe have been reported by many research groups. [2][3][4][5][6][7][8] Logue et al 1 reported a room temperature diffusion length of 0.498 nm for a 6 nm Cd x Zn 1Ϫx Se quantum well with x Cd ϭ0.25 from spatial imaging laser-excited quantum well ͑QW͒ luminescence. Reported diffusion lengths for bulk and thin film samples scatter, depended upon the sample used.…”